IRFH7923PBF ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageApplicationsBenefits Very low R at 4.5V VDS(ON) GS Low Gate Charge Fully Characterized Avala ..
IRFH7923PBF ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageApplications in Neworking &Computing Systems8.7m
IRFH7923PBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
a:io:RIectifier
Applications
PD - 96139A
lRFH7923PbF
H EXFET© Power MOSFET
q Hi h Fre uenc Point-of-LoadS nchronousBuck
anvertzgr for prlications in Nileworking & Voss RDS(on) max 09
Computing Systems 30V 8.7mf2@Vas = 10V 8.7nC
q Optimized for Control FET Applications
Benefits
q Very low RDS(ON) at4.5V Vss
q Low Gate Charge D 6 4 G
q Fully Characterized Avalanche Voltage and D 6 . 1‘31‘23 s
Current D T _ \fj/ _ 2 s
o 100% Tested forfiG D a El s
o Lead-Free (Qualified up to 260°C Reflow)
o RoHS compliant (Halogen Free) PQFN
q Low Thermal Resistance
0 Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage : 20
ID © TA = 25°C Continuous Drain Current, Vss @ 10V 15
ID © TA = 70°C Continuous Drain Current, Ves © 10V 12
ID @ To = 25°C Continuous Drain Current, Vss @ 10V 33 A
IDM Pulsed Drain Current co 120
PD @TA = 25°C Power Dissipation s 3.1 W
Pn @TA = 70°C Power Dissipation s 2
Linear Derating Factor © 0.03 W/°C
TJ Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case © -- 8.3 °C/W
ROJA Junction-to-Ambient © - 40
Notes co through co are on page 9
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06/18/08
IRFH7923PbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.024 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 6.8 8.7 Vas = 10V, b = 15A ©
- 9.3 11.9 mg Vas = 4.5V, ID = 12A ©
VGth) Gate Threshold Voltage 1.35 1.8 2.35 V V = V I = 25 A
AVGS(th) Gate Threshold Voltage Coefficient - -5.8 - mV/°C DS GS, D y
loss Drain-to-Source Leakage Current - - 1.0 VDS = 24V, Vas = 0V
- - 150 PA l/rs = 24V, Vas = OV, T, = 125°C
less Gate-to-Source Forward Leakage -- -- 100 Vss = 20V
Gate-to-Source Reverse Leakage -- -- -100 nA Vss = -20V
gfs Forward Transconductance 29 - - S Vos = 15V, ID = 12A
Qg Total Gate Charge - 8.7 13
As, Pre-Vth Gate-to-Source Charge - 1.8 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.1 - Vas = 4.5V
di Gate-to-Drain Charge - 2.7 - nC ID = 12A
ngdr Gate Charge Overdrive - 3.1 - See Fig.17 & 18
st Switch Charge (0952 + di) - 3.8 -
Qoss Output Charge - 4.9 - nC Vos = 16V, Vss = ov
Re Gate Resistance - 2.0 3.0 Q
td(on) Turn-On Delay Time - 7.1 - VDD = 15V, Vss = 4.5V
tr Rise Time -- 8.7 -- ID = 12A
1.1mm Turn-Off Delay Time -- 8.6 -- ns RG=1.8S2
t, Fall Time -- 4.9 -- See Fig.15
Ciss Input Capacitance - 1095 - Vss = 0V
Coss Output Capacitance - 235 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 110 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 27 mJ
|AR Avalanche Current OD _ 12 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 3 9 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current _ _ 120 integral reverse G
(Body Diode) (D p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 12A, l/ss = 0V ©
in Reverse Recovery Time -- 12 18 ns TJ = 25°C, IF = 12A, VDD = 15V
er Reverse Recovery Charge -- 11 17 nC di/dt = SOONUS ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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