IRFH7921 ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageApplicationsBenefits Very low R at 4.5V VDS(ON) GS Low Gate Charge Fully Characterized Avalanche ..
IRFH7923PBF ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageApplicationsBenefits Very low R at 4.5V VDS(ON) GS Low Gate Charge Fully Characterized Avala ..
IRFH7923PBF ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageApplications in Neworking &Computing Systems8.7m
IRFH7921
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
ISER Rectifier 1tMl'dlM2illt1'0p
Applications HEXFET© Power MOSFET
q High FrequencyPoint-of-LoadSynchronousBuck V R max
Converter for Applications in Neworking & DSS DS(on) 09
Computing Systems 30V 8.5mQ@VGs = 10V 9.3nC
q Optimized for Control FET Applications
Benefits
q Very low RDS(ON) at 4.5V Vss ls D _ G 4
q Low Gate Charge
q Fully Characterized Avalanche Voltage and E6 D - s 3
Current 'oy D T s 2
. 100% Tested for Rs C, C) V T s 1
o Lead-Free (Qualified up to 260°C Reflow)
o RoHS compliant (Halogen Free) PQFN 5X6 mm
q Low Thermal Resistance
0 Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
Vss Gate-to-Source Voltage t 20
ID © TA = 25°C Continuous Drain Current, Vss © 10V 15
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 12
ID © Tc = 25°C Continuous Drain Current, Vas @ 10V 34 A
IDM Pulsed Drain Current C) 120
PD @TA = 25°C Power Dissipation s 3.1 W
Pro OT, = 70°C Power Dissipation G) 2.0
Linear Derating Factor co 0.025 W/°C
TJ Operating Junction and -55 to + 150 I
Tsms Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case © _ 7.9 °C/W
ROJA Junction-to-Ambient © - 40
Notes C) through © are on page 9
ll © 2013 International Rectifier August 16, 2013
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Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 30 - - V Ves = 0V, lo = 250pA
ABN/oss/AT: Breakdown Voltage Temp. Coefficient - 0.02 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance -- 7.1 8.5 mQ Vss = 10V, ID = 15A ©
- 10.4 12.5 Vss=4.5V, ID: 12A ©
VGS(1h) Gate Threshold Voltage 1.35 1.8 2.35 V
. . VDs = Vss, ID = 25yA
AVGS(th) Gate Threshold Voltage Coefficient -- -6.2 -- mV/°C
IDss Drain-to-Source Leakage Current - - 1.0 Vos = 24V, l/ss = 0V
- - 150 PA Vos = 24V, Vas = OV, T, = 125°C
lass Gate-to-Source Forward Leakage -- -- 100 Vss = 20V
Gate-to-Source Reverse Leakage - - -100 nA Ves = -20V
gfs Forward Transconductance 27 - - S Vos = 15V, ID = 12A
ch Total Gate Charge - 9.3 14
As, Pre-Vth Gate-to-Source Charge - 2.2 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.2 - Vas = 4.5V
di Gate-to-Drain Charge - 3.2 - nC ID = 12A
ngdr Gate Charge Overdrive - 2.7 - See Fig.17 & 18
cu Switch Charge (0952 + di) - 4.4 -
Qoss Output Charge - 5.0 - nC Vrrs = 16V, Vss = 0V
Rs Gate Resistance - 1.4 2.4 Q
tum) Turn-On Delay Time - 12 - VDD = 15V, Vas = 4.5V
t, Rise Time - 7.6 - ID = 12A
tum) Turn-Off Delay Time - 14 - ns Rs=1 .89
tr Fall Time - 4.7 - See Fig.15
Ciss Input Capacitance - 1210 - Vss = 0V
Coss Output Capacitance - 240 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 29 mJ
lan Avalanche Current CO - 12 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ _ 3 9 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 120 integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, Is = 12A, l/ss = 0V co
tn Reverse Recovery Time -- 12 18 ns TJ = 25°C, IF = 12A, l/ro = 15V
l Reverse Recovery Charge - 11 17 nC di/dt = 300A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
© 2013 International Rectifier
August 16,2013
