IRFH7911TRPBF ,30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package HEXFET Power MOSFET
IRFH7911-IRFH7911TRPBF
30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package
International
TGR. Rectifier
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VDs 30 30 v
RDS(on) max
(@Ves = 10V) 8.6 3.0 mn
tag (typical) 8.3 34 nC
(@TA=25°C) 13 28 A
Applications
q Control and synchronous MOSFET for buck converters
Features and Benefits
Features
HEXFET© Power MOSFET
-6mm-_
ANw-bU'I
<—5mm —>
Dual PQFN 5X6 mm
Control and synchronous FET in one package
Low charge control MOSFET (8.3 nC typical)
Low RDSon synchronous MOSFET (< 3.0 mn)
100% Rg tested
Low Profile (S 0.9 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL2, Consumer Qualification
results in
Benefits
Increased power density
(50% vs two PQFN 5x6)
Lower switching losses
Lower conduction losses
Increased reliability
Increased power density
Easier manufacturing
Environmentally Friendlier
Increased reliability
Orderable part number Package Type Standard Pack . Note
Form Quantity
IRFH7911TRPbF PQFN 5mm x 6mm Tape and Reel 4000
IfRFH7914TfTY2bF PQFN5mm+6mm Ttape-and-Heel 409 EOL notice # 259
Absolute Maximum Ratings
Parameter tll Max. I 02 Max. Units
VDS Drain-to-Source Voltage 30 V
Vas Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 13 28
lo @ TA = 70°C Continuous Drain Current, Vas @ 10V 10 23 A
G, Pulsed Drain Current C) 100 230
PD ©T, = 25°C Power Dissipation 2.4 3.4 W
PD @TA = 70°C Power Dissipation 1.5 2.2
Linear Derating Factor (9 0.019 0.027 W/°C
TJ Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Q1 Max. 02 Max. Units
'uc Junction-to-Case © 7.7 2.5 °C/W
RNA Junction-to-Ambient © 53 37
fl © 2014 International Rectifier Submit Datasheet Feedback May 9, 2014
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Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage Q1&Q2 30 - - V I/ss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient Q1 -- 0.021 -- V/°C Reference to 25°C, ID = 1mA
Q2 - 0.022 -
Q1 -- 7.2 8.6 Vas =1OV, ID = 12A ©
Roam, Static Drain-to-Source On-Resistance - 11.1 14.5 mn Vss = 4.5V, ID = 10A ©
Q2 - 2.4 3.0 Vas =10V, ID = 26A ©
- 3.4 4.0 VGS=4.5V, b=21A ©
V9501.) Gate Threshold Voltage Q1&Q2 1.35 - 2.35 V Q1: lhas = VGS, ID = 25uA
AVasm/AT, Gate Threshold Voltage Coefficient Q1 - -6.8 - mV/°C Q2: Vos = Vas, b = 100pA
Q2 - -6.4 -
bss Drain-to-Source Leakage Current Q1&Q2 - - 1.0 pA Vos = 24V, Vss = 0V
Q1&Q2 - - 150 VDS = 24V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage Q1&Q2 - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage Q1&Q2 - - -100 VGS = -20V
gfs Forward Transconductance Q1 17 - - S Vos = 15V, ID = 10A
Q2 106 - - VDs=15V. b=21A
00 Total Gate Charge Q1 - 8.3 12
Q2 - 34 51
Qas1 Pre-Vth Gate-to-Source Charge Q1 - 2.0 - Q1
Q2 - 7.9 - Vos = 15V
QasZ Post-Vth Gate-to-Source Charge 01 - 1.0 - nC Vas = 4.5V, ID = 10A
Q2 - 3.6 -
QCld Gate-to-Drain Charge Q1 - 3.2 - Q2
Q2 - 11 - Vos = 15V
andr Gate Charge Overdrive Q1 - 2.1 - Vas = 4.5V, ID = 21A
Q2 - 12 -
st Switch Charge (Q052 + qu) Q1 - 4.2 -
Q2 - 15 -
Iss Output Charge Q1 - 5.0 - nC l/cs = 16V, Vss = 0V
Q2 - 19 -
Rs Gate Resistance Q1 - 1.8 - n
Q2 - 0.7 -
tom Turn-On Delay Time Q1 --- 12 - Q1
Q2 - 22 - l/oo = 15V, Vas = 4.5V
t, Rise Time Q1 -- 15 - ID = 10A
Q2 - 35 - ns RG=1.8§2
ton Turn-Off Delay Time Q1 -- 12 - Q2
Q2 - 28 - l/oo = 15V, Vas = 4.5V
t, Fall Time Q1 - 5.9 - ID = 21A
Q2 - 14 - RG=1 .89
Ciss Input Capacitance Q1 - 1060 -
Q2 - 4450 - l/ss = 0V
Coss Output Capacitance Q1 - 230 - pF VDS = 15V
Q2 - 850 - f = 1.0MHz
Crss Reverse Transfer Capacitance Q1 - 1 10 -
Q2 - 440 -
Avalanche Characteristics
Parameter Typ. 01 Max. 02 Max. Units
EAS Single Pulse Avalanche Energy © - 12 32 mJ
IAR Avalanche Current C) - 10 21 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current OI - - 3.0 A MOSFET symbol _-'" - "
(Body Diode) Q2 - - 3.0 showing the :1
ISM Pulsed Source Current Q1 - - 100 A integral reverse " .. ‘__’ /
(Body Diode) (D Q2 - - 230 p-n junction diode. a',
I/so Diode Forward Voltage OI - - 1.0 V Tu = 25''C, ls = 10A, l/ss = 0V ©
Q2 - - 1.0 TJ=25°C, ls=21A,Vas--0V ©
tr, Reverse Recovery Time Q1 - 13 20 ns Q1 T, = 25°C, IF = 10A,
Q2 - 20 29 I/on = 15V, di/dt = 300A/ps ©
0,, Reverse Recovery Charge Q1 - 13 20 nC Q2 T, = 25°C, IF = 21A,
Q2 - 24 36 Vor, = 15V, di/dt = 280A/ps ©
© 2014 International Rectifier Submit Datasheet Feedback May 9, 2014
