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IRFH5250TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
TGR. Rectifier
1tM,'ltNIE0tWp
HEXFET© Power MOSFET
VDS 25 V
RDS(on) max 1 .15 mn
(@ l/ss = 10V)
09 (typical) 52 nC
Ra (typical) 1 .3
(@Tmb = 25°C) 100 © A PQFN 5X6 mm
Applications
q OR-ing MOSFET for 12V (typical) Bus in-Rush Current
q Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Low RDSon (<1.15 mn)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount
Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Orderable part number Package Type Form Quantity Note
IRFH5250TfRPbF PQFN 5m x 6mm Tape and Reel 4000
IfWH52g0TT12f2Bf2 PaFN-9mrx-6mm Ttape-and-Reel 400 EOL notice # 259
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 25 V
Vos Gate-to-Source Voltage t 20
ID © TA = 25''C Continuous Drain Current, Ves © 10V 45
ID © TA = 70°C Continuous Drain Current, Vos © 10V 31
ID © Tmb = 25°C Continuous Drain Current, Vas @ 10V 100 <6) A
Ir, © Tm; = 100°C Continuous Drain Current, Vos @ 10V 1006)
bu Pulsed Drain Current (O 400
PD ©T, = 25°C Power Dissipation IE 3.6 W
PD ©T,,t, = 25°C Power Dissipation C/ 160
Linear Derating Factor E) 0.029 W/''C
TJ Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Notes CO through © are on page 8
fl wvwv.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013
E(2iR,
Mt1liWItrtW'0ti
Static @ To = 25°C
(unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V Vas = 0V, ID = 250pA
ABVDSSIATJ Breakdown Voltage Temp. Coefficient - 0.02 - V/°C Reference to 25°C, ID = 1mA
Roman) Static Drain-to-Source On-Resistance - 0.9 1.15 m Q Vas = 10V, ID = 50A ©
- 1.4 1.75 Vas = 4.5V, ID = 50A ©
Vaam) Gate Threshold Voltage 1.35 1.80 2.35 V V95 = Vas, ID = 150pA
AVGSM, Gate Threshold Voltage Coefficient - -6.3 - mV/°C
IDSS Drain-to-Source Leakage Current - - 5.0 p A VDS = 20V, l/ss = 0V
- - 150 VDS = 20V, l/ss = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
gfs Forward Transconductance 181 - - S VDS = 13V, ID = 50A
Q, Total Gate Charge - 110 - nC Vas = 10V, VDS = 13V, ID = 50A
Q, Total Gate Charge - 52 78
0951 Pre-Vth Gate-to-Source Charge - 13 - VDS = 13V
0152 Post-Vth Gate-to-Source Charge - 7.8 - n C Vas = 4.5V
Qud Gate-to-Drain Charge - 17 - ID = 50A
Quod, Gate Charge Overdrive - 15 -
st Switch Charge (%se + as) - 25 -
Qoss Output Charge - 36 - nC l/rss = 16V, l/ss = 0V
Rs Gate Resistance - 1.3 - Q
tdmn, Turn-On Delay Time - 28 - Va, = 13V, Ves = 4.5V
t, Rise Time - 46 - ns ID = 50A
tum") Turn-Off Delay Time - 30 - RG=1.8Q
t, Fall Time - 19 -
Ciss Input Capacitance - 7174 - Vas = 0V
Coss Output Capacitance - 1758 -- pF Vos = 13V
cu, Reverse Transfer Capacitance - 828 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 468 mJ
IAR Avalanche Current (D - 50 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 100 Ctr) MOSFET symbol D
(Body Diode) A showing the
G, Pulsed Source Current - - 400 integral reverse G
(Body Diode) Cl) p-n junction diode. s
VSD Diode Forward Voltage - - 1.0 V T J = 25°C, ls = 50A, Vas = 0V (3)
t, Reverse Recovery Time - 37 56 ns TJ = 25°C, IF = 50A, VDD = 13V
a,, Reverse Recovery Charge - 68 102 nC di/dt = 200A/us <3)
u, Forward Tum-On Time Time is dominated by parasitic Inductance
Thermal Resista
Junction-
Junction-to-Case tT
Junction-to-Ambient C9
Junction-to-Ambient <3)
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