IRFH5007TRPBF ,75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageFeatures≤ ΩLow R ( 5.9m ) Lower Conduction LossesDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) Ena ..
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ISL6506BCB ,Multiple Linear Power Controller with ACPI Control InterfaceISL6506, ISL6506A, ISL6506B®Data Sheet May 2, 2005 FN9141.2Multiple Linear Power Controller with
IRFH5007TRPBF
75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
IQQR Rectifier
|RFH5007PbF
HEXFET© Power MOSFET
Vos 75 V
RDS(on) max 5.9 m9
(@Vss = 10V) ‘, . x;
th (typical) 65 nC \ér ”\
Be (typical) 1 .2 Q
k, 100© "C:
(©Tmr, = 25°C) PQFN 5xs mm
Applications
q Secondary Side Synchronous Rectification
o Inverters for DC Motors
q DC-DC Brick Applications
q Boost Converters
Features and Benefits
Features
Low RDSon (S 5.9mS2)
Low Thermal Resistance to PCB (S 0.8°C/W)
100% Rg tested
Benefits
Lower Conduction Losses
Enables BetterThermal Dissipation
Increased Reliability
Low Profile (S 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
lRFH5007PBF PQFN 5mm x 6mm Tape and Reel 4000 IF1FH5007TRPBF
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 75 V
Vas Gate-to-Source Voltage t20
lo @ TA = 25°C Continuous Drain Current, I/ss @ 10V 17
ID © TA = 70°C Continuous Drain Current, Vss @ 10V 13
lo @ Tmb= 25°C Continuous Drain Current, I/ss @ 10V 100© A
ID © Tm: 100°C Continuous Drain Current, Vss @ 10V 88
IBM Pulsed Drain Current C) 400
PD OT, = 25°C Power Dissipation s 3.6 W
PD @ Tmb = 25°C Power Dissipation Cl) 156
Linear Derating Factor © 0.029 l/VPC
T, Operating Junction and -55 to + 150 ''C
Tsrs Storage Temperature Range
Notes OD through G) are on page 8
fl © 2013 International Rectifier
September 6, 2013
It,1tiR, _l,i1B1liltrtBmi'k'0'
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 75 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.09 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 5.1 5.9 m9 I/ss = 10V, ID = 50A ©
VGSW) Gate Threshold Voltage 2.0 - 4.0 V
Avesoh, Gate Threshold Voltage Coefficient - -8.4 - mV/°C Vos = Vas, ID = 150pA
loss Drain-to-Source Leakage Current - - 20 Vos = 75V, I/ss = 0V
- - 250 PA vDS = 75V, Vss = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 nA l/ss = -20V
gfs Forward Transconductance 100 - - S Vos = 15V, ID = 50A
Q, Total Gate Charge - 65 98
0951 Pre-Vth Gate-to-Source Charge - 11 - Vos = 38V
0952 Post-Vth Gate-to-Source Charge - 4.5 - n C I/ss = 10V
di Gate-to-Drain Charge - 20 - ID = 50A
ngdr Gate Charge Overdrive - 29.5 - See Fig.17 & 18
st Switch Charge (Qg,32 + di) - 24.5 -
Qoss Output Charge - 21 - nC Vos = 16V, Vss = 0V
Re Gate Resistance - 1.2 - Q
tom Turn-On Delay Time - 10 - Va, = 38V, I/ss = 10V
t, Rise Time - 14 - ns ID = 50A
ton Turn-Off Delay Time - 30 - Rs=1 .89
t, Fall Time - 11 - See Fig.15
Ciss Input Capacitance - 4290 - I/ss = 0V
Coss Output Capacitance - 510 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 210 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy C) - 250 mJ
IAR Avalanche Current (D - 50 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - _ 100 MOSFET symbol D
(Body Diode) © A showing the
ISM Pulsed Source Current - _ 400 integral reverse G
(Body Diode) OD p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 50A, Vas = 0V (3
trr Reverse Recovery Time - 31 47 ns T J = 25°C, IF = 50A, VDD = 38V
a,, Reverse Recovery Charge - 170 255 nC di/dt = 500A/us ©
u Forward Turn-On Time Time is dominated by parasitic Inductance
Thermal Resistance
Parameter Typ. Max. Units
Rmomb Junction-to-Mounting Base 0.5 0.8
ROJC (Top) Junction-to-Case © - 15 °C/W
RNA Junction-to-Ambient s - 35
RNA (<1OS) Junction-to-Ambient s - 22
lil © 2013 International Rectifier September 6, 2013
