IRFH5006TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageFeaturesLow R (≤ 4.1mΩ) Lower Conduction LossesDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) Enabl ..
IRFH5007TRPBF ,75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageFeatures≤ ΩLow R ( 5.9m ) Lower Conduction LossesDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) Ena ..
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ISL6506ACBZ-T ,Multiple linear power controller with ACPI control interface.Block Diagram DLA VCC S3# S5#12V POR 10µA10µA3.5ΩSENSEMONITOR&5VDLSBCONTROLTEMPERATUREMONITORSOFT S ..
IRFH5006TRPBF
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
lézR Rectifier
JWGtjfiIilfdNA,
HEXFET© Power MOSFET
V93 60 V
RDS(on) max 4.1 mf2
(@VGS = 10V)
th (typical) 69 nC
no (typical) 1.2
Ir, 100©
(@Tmb = 25°C)
Applications
PQFN 5X6 mm
. Secondary Side Synchronous Rectification
o Inverters for DC Motors
. DC-DC Brick Applications
. Boost Converters
Features and Benefits
Features
Low RDSon (f 4.1 mo)
Low Thermal Resistance to PCB (S 0.8°C/W)
100% Rg tested
Low Profile (S 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number Package Type Standard Pack Orderable part number
Form Quantity
lRFH5006PBF PQFN 5mm x 6mm Tape and Reel 4000 1RFH5006TF1PBF
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 60 V
l/ss Gate-to-Source Voltage :20
lo @ TA = 25°C Continuous Drain Current, Vas @ 10V 21
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 17
ID @ Tmb = 25°C Continuous Drain Current, I/ss @ 10V 100© A
lr, @ Tmb = 100°C Continuous Drain Current, Vss @ 10V 100©
IDM Pulsed Drain Current (D 400
PD @TA = 25°C Power Dissipation G) 3.6 W
Pr, @ Tmb = 25°C Power Dissipation s 156
Linear Derating Factor s 0.029 WPC
T, Operating Junction and -55 to + 150 I
TSTG Storage Temperature Range
Notes OD through G) are on page 8
ll © 2013 International Rectifier May 13, 2013
I(2iR,
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.07 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.5 4.1 mg Vas = 10V, ID = 50A ©
VGsah) Gate Threshold Voltage . . 2.0 - 4.0 V VDS = Vas, ID = 150PA
AVsam) Gate Threshold Voltage Coefficient - -8.0 - mV/°C
loss Drain-to-Source Leakage Current - - 2O Vos = 60V, Vas = 0V
- - 250 PA vDs = 60V, I/ss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 92 - - S Vos = 25V, b = 50A
Q, Total Gate Charge - 69 104
Qgs1 Pre-Vth Gate-to-Source Charge - 12 - VDS = 30V
0952 Post-Vth Gate-to-Source Charge - 6.8 - C Vas = 10V
di Gate-to-Drain Charge - 20 - n ID = 50A
090d, Gate Charge Overdrive - 30.2 - See Fig.1 & 18
st Switch Charge (Qgsz + di) - 26.8 -
Qoss Output Charge - 23 - nC VDS = 16V, I/ss = 0V
Re Gate Resistance - 1.2 - f2
tam”) Turn-On Delay Time - 9.6 - Va, = 30V, Vss = 10V
t, Rise Time - 13 - ID = 50A
tam) Tum-Off Delay Time - 30 - ns RG=1.8Q
t, Fall Time - 12 - See Fig.15
Ciss Input Capacitance - 4175 - Vas = 0V
Coss Output Capacitance - 550 - pF VDS = 30V
Crss Reverse Transfer Capacitance - 255 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 285 mJ
|AR Avalanche Current C) - 50 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
. - - 100 . _
(Body Diode) © A showing the ur
ISM Pulsed Source Current - - 400 integral reverse G '
(Body Diode) co p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 50A, Vss = 0V ©
t,, Reverse Recovery Time - 28 42 ns T J = 25°C, IF = 50A, VDD = 30V
Q,, Reverse Recovery Charge - 130 195 no di/dt = 500A/ps ©
tion Forward Turn-On Time Time is dominated by parasitic Inductance
Thermal Resistance
Parameter Typ. Max. Units
Rm.“ Junction-to-Mounting Base 0.5 0.8
Rm (Top) Junction-to-Case © - 15 0cm
RNA Junction-to-Ambient s - 35
ReJA(<1OS) Junction-to-Ambient © - 22
8 www.i_rt.com © 2013 International Rectifier May 13, 2013
