IRFG110 ,100V Quad N-Channel MOSFET in a MO-036AB packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
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ISL6443IRZ-T , 300kHz Dual, 180 Degree Out-of-Phase, Step-Down PWM and Single Linear Controller
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IRFG110
100V Quad N-Channel MOSFET in a MO-036AB package
PD - 90396G
International
. . IRFG1 1 o
TOR, Rech h er JANTX2N7334
JANTXV2N7334
POWER MOSFET REF:MIL-PRF-''1950o/597
THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNEL
Product Summary HEXFET® MOSFETTECHNOLOGY
Part Number RDS(on) ID
IRFG110 0.7 n 1.0A i'i'iiitrr,s,
HEXFET® MOSFET technology is the key to International ritiiit
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET M0-036AB
transistors also feature all of the well-established advan-
1ages of MSFE.T.s:.such as voltage control, very fast switch- Featu res:
Ing, ease of paralleling and electrical parameter temperature
.stability. They are well-suited for tpp.lica.tions such as switch- a Simple Drive Requirements
mg power supplies, motor controls, inverters, choppers, .
audio amplifiers, high energy pulse circuits, and virtually n Ease of Paralleling
any application where high reliability is required. The " 1erry.etic..ally. Sealed
HEXFETtransistor’s totally isolated package eliminates the n 5lectric.ally. lsolatecli
need for additional isolating material between the device a Dynam" dv/dt Rating
and the heatsink. This improves thermal efficiency and n Light-weight
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 1.0
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 0.6 A
IDM Pulsed Drain Current C) 4.0
PD @ TC = 25°C Max. Power Dissipation 1.4 W
Linear Derating Factor 0.011 W/°C
VGS Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 75 mJ
IAR Avalanche Current CO - A
EAR Repetitive Avalanche Energy (D - mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.63 in./1.6 mm from case for 10s)
Weight 1.3 (Typical) g
For footnotes refer to the last page
1
04/16/02
IRFG110
International
TOR Rectifier
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coemcient of Breakdown - 0.13 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.7 VGS = 10V, ID = 0.6A
Resistance - - 0.8 VGS = 10V, ID = 1.0A
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250pA
gfs Forward Transconductance 0.86 - - S M I/DS > 15V, ts = 0.6A G)
loss Zero Gate Voltage Drain Current - - 25 VDS= 80V ,N/GS=0V
- - 250 “A VDS = 80V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
09 Total Gate Charge - - 15 VGS =10V, ID = 1.0A
Qgs Gate-to-Source Charge - - 7.5 nC VDS = 50V
di Gate-to-Drain ('Miller') Charge - - 7.5
td(on) Turn-On Delay Time - - 20 VDD = 50V, ID = 1.0A,
tr Rise Time - - 25 VGS =10V, RG = 7.59
td(off) Turn-Off Delay Time - - 40 ns
tt FallTime - - 40
LS + LD Total Inductance - 10 - nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
Ciss Input Capacitance - 180 - VGS = 0V, VDs = 25V
Coss Output Capacitance - 82 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 15 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 1.0 A
ISM Pulse Source Current (Body Diode) co - - 4.0
VSD Diode Forward Voltage - - 1.5 V T] = 25°C, ls = 1.0A, VGS = 0V ©
trr Reverse Recovery Time - - 200 nS Tj = 25°C, IF = 1.0A, di/dt s 100/Ws
QRR Reverse Recovery Charge - - 0.83 PC VDD 3 50V @
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 17 ''CAN
RthJA Junction-to-Ambient - - 90 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
