IRFF9110 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
IRFF9120 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
IRFF9130 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
IRFF9210 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
IRFF9220 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90553CIRFF9220REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6847HEXFET TRANSISTORS JANTXV2N68 ..
IRFF9230 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90551D ..
ISL6440IAZ-T , 300kHz Dual, 180 Degree Out-of-Phase, Step-Down PWM Controller
ISL6441IRZ , 1.4MHz Dual, 180 Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6443AIRZ , 300kHz Dual, 180° Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6443IRZ-T , 300kHz Dual, 180 Degree Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6443IRZ-T , 300kHz Dual, 180 Degree Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6443IRZ-TK , 300kHz Dual, 180 Degree Out-of-Phase, Step-Down PWM and Single Linear Controller
IRFF9110
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
International
TOR, Rectifier
REPETITIVE AVALANCHE AND dvldt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-205AF)
ProductSummary
Part Number BVDSS RDS(on) ID
IRFF9110 -100V 129 -2.5A
The HEXFET%chnology is the key to International
RectifIer's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
PD - 90388
IRFF91 1 O
100V, P-CHANNEL
Features:
a Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -2.5
ID @ VGS = -10\/, TC = 100°C Continuous Drain Current -1.6 A
l D M Pulsed Drain Current C) -10
PD @ TC = 25°C Max. Power Dissipation 15 W
Linear Derating Factor 0.12 W/°C
vas Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 87 ml
I AR Avalanche Current co - A
EAR Repetitive Avalanche Energy co - ml
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98(typical) g
For footnotes refer to the last page
1
01l23/01
IRFF9110
International
TOR Rectifier
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
U/DSS Drain-to-Source Breakdown Voltage -100 - - V VGS = ov, ID = -1.0mA
ABVDsslATJ Temperature Coemcient of Breakdown - -0.10 - V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 1.2 VGS = -10\/, ID = -1.6A ©
Resistance - - 1.38 n VGS =-10V, ID = -2.5A (4C)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGS, ID = -250VA
git Forward Transconductance 0.8 - - S © VDs > -15V, log = -1.6A ©
toss Zero Gate Voltage Drain Current - - -25 VDs= -80V, VGS=0V
- - -250 pA VDS = -80V
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - -100 VGS = -20V
tax Gate-to-Source Leakage Reverse - - 100 nA VGS = 20V
09 Total Gate Charge 4.0 - 9.8 VGS =-10V, ID = -2.5A
As Gate-to-Source Charqe 0.8 - 1.8 M VDs= -50V
di Gate-to-Drain ('Miller') Charge 1.9 - 4.3
td(on) Turn-On Delay Time - - 30 VDD = -50\/, ID = -2.5A,
tr Rise Time - - 60 RG =7.5f2
lien Turn-Off Delay Time - - 40 ns
tt Fall Time - - 40
LS + LD Total Inductance - 7.0 - nH Measured from drainlead(6mmlo.25in.from
package) to source lead (6mm/O.25in. from
package)
Cts Input Capacitance - 200 VGS = 0V, VDS = -25V
Cds Output Capacitance - 85 - pF f = 1.0MHz
Ciss Reverse Transfer Capacitance - 30 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ls Continuous Source Current (Body Diode) - - -2.5 A
ISM Pulse Source Current (Body Diode) C) - - -1 O
VSD Diode Forward Voltage - - -5.5 V T] = 25°C, Is =-2.5A, VGS = 0V (4C)
trr Reverse Recovery Time - - 200 rt Tj = 25°C, IF = -2.5A, di/dt s: -100A/us
QRR Reverse Recovery Charge - - 4.0 pt VDD s: -50V ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units TestConditions
RthJC Junction-to-Case - - 8.3 a
RthJA Junction-to-Ambient - - 175 CM, Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
