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IRFD9110
0.7A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
Eddly12
International
Rectifier
PD-9.389G
IRFD9110
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 For Automatic Insertion
VDSS = -100V
o End Stackable
0 P-Channel
0 175°C Operating Temperature
0 Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
ID =: -0.70A
RDS(On) = 1.29
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. Units
ID Q; To = 25°C Continuous Drain Current, Vas @ ~10 V -0.70
lo © To = 100°C Continuous Drain Current, Vas © -10 V -0.49 A
loM Pulsed Drain Current co Ai.6
PD @ Tc = 25°C Power Dissipation 1.3 W
Linear Derating Factor 0.0083 W/°C
Vss Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 140 md
IAR Avalanche Current (i) -0.70 A
EAFI Repetitive Avalanche Energy (D 0.13 md
dv/dt Peak Diode Recovery dv/dt cs) -5.5 V/ns
To Operating Junction and .55 to +175
Tsra Storage Temperature Range oc
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Ram Junction-to-Ambient - - 120 'C/W
IRFD9110
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V . l/as-HN, ID=-2500A
AV(BH)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.091 - VPC Reference to 25°C, ko=-1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.2 $2 Ves=-10V, b=-0.42A ©
Vtssith) Gate Threshold Voltage -2.0 - -4.0 V Vos=VGs, b=-250PA
grs Forward Transconductance 0.60 _-- - . S Vos=-50V, b=-0.42A C4)
. - - -1OO Vos=-100V, Ver-OV
loss Drain-to-Source Leakage Current - - -500 WA Vns=-80V, Vss=0V, TJ=150°C
loss Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage - - 100 Vas=20V
th Total Gate Charge - - 8.7 lir=-4.0A
Qgs Gate-to-Source Charge _ - - 2.2 nC Vos=-80V
an Gate-to-Drain ("Miller") Charge -- - 4.1 VGs=-10V See Fig. 6 and 13 ©
tam Turn-On Delay Time - 10 - VDD=-50V
tr Rise Time -... 27 - ns lo=-4.0A
tdtoff) Turn-Off Delay Time ..-. 15 - Re=24§2
tr Fall Time - 17 - Ro=11Q See Figure 10 ©
Lo Internal Drain Inductance - 4.0 - g (Ems 'tie'. ') :iiii-ii)
nH from package G 1
Ls internal Source Inductance - 6.0 - Ind center 6f
die contact s
Ciss Input Capacitance - 200 - Ves=0V
Cass Output Capacitance - 94 - pF Vos=-25V
Crss Reverse Transfer Capacitance - 18 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current _ - -0 70 MOSFET symbol D
(Body Diode) . A showing the Lr,
ISM Pulsed Source Current - - -5. 6 integral rfaver§e G (tl-':
(Body Diode) (O p-n Junction diode. s
Vso Diode Forward Voltage - - -5.5 V 3:2500’ ls=-0.70A, l/tss-HN
trr Reverse Recovery Time - 82 160 ns TJ=25°C, ltr=-4.0A
er Reverse Recovery Charge - 0.15 0.30 “C di/dt=100A/ps ©
Notes:
6) Repetitive rating; pulse width limited by
_ max. junction temperature (See Figure 11)
Q) VDo=-25V, starting TJ=25°C, L=52mH
RG=259, 1As=-2.0A (See Figure 12)
s Isos-4DA, di/dts75A/us, VDDSV(BR)DSS,
TJS175°C
G) Pulse width S 300 ps; duty cycle 32%.
