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IRFD9024
-60V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
kttenrtaiiDrtall
Rectifier
PD-9.698A
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic
P-Channel
175°C Operating Temperature
Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
0 End Stackable
IIRFD9024 b..
Insertion
VDSS = -601/
[D = -1.6A
RDS(on) = 0.289
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertablt, case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. Units
lo © To = 25°C Continuous Drain Current, Vss © -10 V -1.6
In © To = 100°C Continuous Drain Current, Vas © -10 V -1.1 A
10M Pulsed Drain Current C) -13
Po © To = 25°C Power Dissipation 1.3 W
Linear Deratlng Factor 0.0083 WPC
Ves Gate-to-Source Voltage d:20 V
EAS Single Pulse Avalanche Energy © 140 mJ
IAR Avalanche Current (i) -1.6 A
EAR Repetitive Avalanche Energy (0 0.13 mJ
dv/dt Peak Diode Recovery dv/dt © 44.5 V/ns
To Operating Junction and -55 to +175
TSTG Storage Temperature Range . oc)
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rm Junction-to-Ambient - - 120 °C/W
IFlFD9024
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
:rdst, _
Parameter Min. Typ. Max. Units Test Conditions
V(anss Drain-to-Source Breakdown Voltage -60 - - V I/ss-HN, lo=-250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.056 - VPC Reference to 25°C, lo=-1mA
Rosm Static Drain-to-Source On-Resistance - - 0.28 n Ves=-10V, Io=-0.96A G)
Vegan) Gate Threshold Voltage -2.0 - -4.0 V Vns--Vas, lis=-250pA
gis Fotward Transconductance 1.3 - - S Vos=-25V, b=-0.96A CO
loss Drain-to-Source Leakage Current - - -100 PA Vosa=-60V, Vasr=0V
- - -500 Vos=-48V, Ves=0V. To=15tPC
less ' Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=20V
th Total Gate Charge _ - - 19 Io;-11A
Qgs Gate-to-Source Charge - - 5,4 " Vos=-48V
di Gate-to-Drain ("Miller") Charge - - 11 VGs=-10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 13 - VDo=-30V
tr Rise Time - 68 - ns |D=-11A
tam) Tum-Off Delay Time - 15 - Rir=18n
tr Fall Time - 29 = Ro=2.5(2 See Figure 10 ©
. _ Between lead, D
Lo Internal Drain Inductance - 4.0 - 6 mm (0.25in.) l_
nH from package ai[tii'il:
Ls Internal Source Inductance - 6.0 - Ind center df
die contact 3
Ciss Input Capacitance - 570 - Ves=OV
Coss Output Capacitance - 360 - pF vL--.asv
Crss Reverse Transfer Capacitance - 65 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
_ Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -1 6 MOSFET symbol D
(Body Diode) ' A showing the
ISM Pulsed Source Current - - -1 3 integral reverse G
(Body Diode) (CO p-n junction diode, S
Van Diode Forward Voltage - - -6.3 V TJ=25°C, ls=-1.6A, Vas=OV ©
tn Reverse Recovery Time - 100 200 ns TJ=25°C, IF----1 1A
er Reverse Recovery Charge - 0.32 0.64 PIC) di/dt=100A/us a)
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (tum-on is dominated by Ls+Lo)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJ=25°C, L=15mH
Re=25£2, IAs=-3.2A (See Figure 12)
© Isos-1 1A, di/dts14OA/ps, VDDSV(BR)DSS.
TJS175°C
© Pulse width 3 300 us; duty cycle s2%.
