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IRFD420
500V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
International
IOR Rectifier
PD -9.1227
IRFD420
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
0 Repetitive Avalanche Rated L)
o For Automatic Insertion VDSS = 500V
. End Stackable
. Fast Switching " RDS(on) = 3.on
. Ease of paralleling G
q Simple Drive Requirements ID = 0.37A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The 4-pin DIP package is a Iow-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, VGS @ 10 V 0.37
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10 V 0.23 A
IDM Pulsed Drain Current OD 3.0
Pro @Tc = 25''C Power Dissipation 1.0 W
Linear Derating Factor 0.0083 W/''C
VGs Gate-to-Source Voltage I20 V
EAS Single Pulse Avalanche Energy © 51 mJ
IAR Avalanche Current© 0.37 A
EAR Repetitive Avalanche Energy (D 0.10 m]
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter
Min. Typ. Max. Units
Junction-to-Ambient
- - 120 "CAN
Revision 0
IRFD420
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.59 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 3.0 n VGS = 10.0V, ID = 0.22A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = N/ss, ID = 250PA
gfs Forward Transconductance 1.5 - - S VDs = UN, ID = 1.3A
loss Drain-to-Source Leakage Current - - 25 p A Vos = 500V, VGs = 0V
- - 250 Vos = 400V, Ves = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 VGS = 20V
Gate-to-Source Reverse Leakage - - -100 nA I/ss = -20V
ug Total Gate Charge - - 24 ID = 2.1A
Qgs Gate-to-Source Charge - - 3.3 nC Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 13 Vcs = 10V ©
td(on) Turn-On Delay Time - 8.0 - VDD = 250V
t, Rise Time - 8.6 - ns ID = 2.1A
tum) Turn-Off Delay Time - 33 - Rs = 189
tt Fall Time - 16 - RD = 120n ©
Lo Internal Drain Inductance - 4.0 - Between lead, D
6mm (0.25in.)
Ls Internal Source Inductance - 6.0 - nH from package
and center of G J
die contact c
Ciss Input Capacitance - 360 - VGs = OV
0055 Output Capacitance - 92 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 37 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol -7213
. - - 0.37 . A cr,
(Body Diode) A showing the i] H”
ISM Pulsed Source Current - - 5 0 integral reverse 'up,. " 1 jc','
(Body Diode) OD . p-n junction diode. "--'" ',
Vso Diode Forward Voltage - - 1.6 V To = 25°C, Is = 0.37A, VGS = 0V (4)
trr Reverse Recovery Time - 260 520 ns To = 25°C, IF = 2.1A
Qrr Reverse RecoveryCharge - 0.70 1.4 pC di/dt = 100/Vps (4)
ton Forward Tum-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© VDD = 50V, starting To = 25°C. L = 40mH
RG = 259, IAS = 1.5A.
(3 Isro 5 4.4A, di/dt S 90/Ups, I/oo S V(BR)DSS!
Tu f 150°C
© Pulse width s: 300ps; duty cycle 3 2%.
