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IRFD214
250V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
International
IOR Rectifier
HEXFET® Power MOSFET
PD -9.1271
|RFD214
q Dynamic dv/dt Rating
0 Repetitive Avalanche Rated L)
o For Automatic Insertion VDSS = 250V
. End Stackable
. Fast Switching " RDs(on) = 2.09
. Ease of paralleling
q Simple Drive Requirements ID = 0.45A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The 4-pin DIP package is a Iow-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, VGS @ 10 V 0.45
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10 V 0.29 A
IDM Pulsed Drain Current OD 3.6
Pro @Tc = 25''C Power Dissipation 1.0 W
Linear Derating Factor 0.0083 W/''C
VGs Gate-to-Source Voltage I20 V
EAS Single Pulse Avalanche Energy © 57 mJ
IAR Avalanche Current© 0.45 A
EAR Repetitive Avalanche Energy (D 0.10 m]
dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter
Typ. Max. Units
Junction-to-Ambient
- 120 "CAN
Revision 0
|RFD214 TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V VGS = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.39 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 2.0 Q VGS = 10.0V, ID = 0.27A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = N/ss, ID = 250PA
gfs Forward Transconductance 0.90 - - S VDs = UN, ID = 1.6A
loss Drain-to-Source Leakage Current - - 25 A Vos = 250V, VGS = 0V
- - 250 p Vos = 200V, Ves = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 VGS = 20V
Gate-to-Source Reverse Leakage - - -100 nA I/ss = -20V
ug Total Gate Charge - - 8.2 ID = 2.7A
Qgs Gate-to-Source Charge - - 1.8 nC Vos = 200V
di Gate-to-Drain ("Miller") Charge - - 4.5 VGs = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 7.0 - VDD = 125V
t, Rise Time - 7.6 - ns ID = 2.7A
tum) Turn-Off Delay Time - 16 - Rs = 24n
tt Fall Time - 7.0 - RD = 459, See Fig. 10 (9
Lo Internal Drain Inductance - 4.0 - nH Between lead, D
Ls Internal Source Inductance - 6.0 - 6mm (0.25in.)
from package a J
and center of
die contact I
Ciss Input Capacitance - 140 - VGS = 0V
CDSS Output Capacitance - 42 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 9.6 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol 7,.“3
. - - 0.45 . A cr,
(Body Diode) showing the . W_
A . ( , h
ISM Pulsed Source Current integral reverse a5. " 1 " '
(Body Diode) OD - - 3.6 p-n junction diode. "<--' ',
Vso Diode Forward Voltage - - 2.0 V To = 25°C, Is = 0.45A, VGS = 0V (4)
trr Reverse Recovery Time - 190 390 ns To = 25°C, IF = 2.7A
Qrr Reverse RecoveryCharge - 0.64 1.3 pC alot = 100Nus (4)
ton Forward Tum-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by (3 'sn 5 2.7A, di/dt s: 65A/ps, I/oo g V(BR)DSSv
max. junction temperature. (See fig. 11 ) Tu f 150°C
© VDD = 50V, starting To = 25°C, L = 28mH © Pulse width S 300ps; duty cycle 5 2%.
Rs = 259, IAS = 1.8A. (See Figure 12)
