IRFD210 ,200V Single N-Channel HEXFET Power MOSFET in a HEXDIP packagePD-9.386G
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IRFD210
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
nternatiortail
Rectifier
PD-9.386G
IRFD210
HEXFET6 Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
Fast Switching
VDSS = 200V
0 End Stackable
Ease of Paralleling
o Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
ID = 0.60A
RDS(on) = 1.59
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. .Units
113 @ To = 25°C Continuous Drain Current, Ves @ 10 V 0.60
lo © To = 100°C Continuous Drain Current, Ves © 10 V 0.38 A
IDM Pulsed Drain Current co 4.8
Po @ To = 25°C Power Dissipation 1.0 W
Linear Derating Factor 0.0083 WPC
Ws Gate-to-Source Voltage 1-20 V
EAs Single Pulse Avalanche Energy 2 79 ml
IAR Avalanche Current (D 0.60 A
EAR Repetitive Avalanche Energy CIC) 010 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to +150
Tsrs Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rm Junction-to-Ambient - - 120 °C/W
IRFD210
Electrical Characteristics tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V Ves=0V, Io: 2500A
AVuanmss/ATJ Breakdown Voltage Temp. Coefficient - 0.30 - VPC Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.5 n Ves=10V, lo=0.36A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, lo: 250M
ggs Forward Transconductance 0.10 - - S VDs=50V, b=0,36A ©
loss Drain-to-Source Leakage Current - - 25 WA VDS=200V’ Vss=0V .
- - 250 l/DS-rl 60V, Ves=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
th Total Gate Charge - - 8.2 19:3.3A
Qgs Gate-to-Source Charge - - 1.8 " Vos=160V
di Gate-to-Drain ("Miller") Charge - - 4.5 Ves=10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 8.2 - Voo=100V
tr _ Rise Time - 17 - n s Ire3.3A
tum) Turn-Off Delay Time - 14 - Rs--..24n
t, Fall Time - 8.9 - RD--30tl See Figure 10 ©
Lo Internal Drain Inductance - 4.0 - tihtl1(rlilltiei.') D
. nH from package ii)]
Ls Internal Source Inductance - 6.0 - Ind center 6t HE
die contact s
Ciss . Input Capacitance - 140 - Vas=0V
Cass Output Capacitance - 53 - pF V03: 25V
Crss Reverse Transfer Capacitance - 15 .--.r. f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 0.60 MOSFET symbol D
(Body Diode) A showing the ttf)
ISM Pulsed Source Current - - 4 8 integral reverse G D.
(Body Diode) (D ' p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, ls=0.60A, I/ss-HN ©
trr Reverse Recovery Time - 150 310 ns TJ=25°C, IF=3.3A
G, Reverse Recovery Charge - 0.60 1.4 wc di/dt=100A/ws C4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
CO Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=82mH
RG=25Q. |As=1.2A (See Figure 12)
TJS150°C
© ISDSSBA, di/dts70A/us, VDDSV(BR)DSS,
© Pulse width I 300 ps; duty cycle 32%.
