IRFD120 ,100V Single N-Channel HEXFET Power MOSFET in a HEXDIP packageInternational
TOR Rectifier
PD-9.385H
IRFD120
HEXFETO Power MOSFET
0 Dynamic dv/dt Rat ..
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. Dynamic dv/dt R ..
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IRFD120
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
International
Rectifier
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 For Automatic Insertion
0 End Stackable
0 175°C Operating Temperature
tt FastSwitching
0 Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.385H
|RFD12O
D vDSS = 100V
RDS(on) 'lr.. th27n
S ID = 1.3A
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
"l :13
Absolute Maximum Ratings
Parameter Max. Units
lo @ Tc = 25°C Continuous" Drain Current, Vas @ 10 V 1.3
In © Tc = 100°C Continuous Drain Current, Vas @ 10 V 0.94 A
10M Pulsed Drain Current (D 10
Po @ To = 25°C Power Dissipation 1.3 W
Linear Derating Factor 0.0083 WPC
Ves Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 100 mJ
lAn Avalanche Current C) 1.3 A
EAR Repetitive Avalanche Energy co 0.13 md
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
To Operating Junction and -55 to +175 ,
TSTG Storage Temperature Range t
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. I Units
I Ram Junction-to-Ambient - - 120 °C/W
IRFD120
Electrical Characteristics tii) TJ = 25°C (unless otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
V(enwss Drain-to-Source Breakdown Voltage 100 - - V VGs=0V, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.13 - VPC Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - ..- 0.27 n Ves=10V, lir=0.78A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250pA
ggs Forward Transconductance 0.80 - - S Vos=50V, Io=0.78A ©
. - - 25 Vos=100V, Ves=0V
loss Drain-to-Source Leakage Current - - 250 WA Vos=80V, Ves=0V, TJ=150°C
less Gate-to-Source Forward Leakage - -d... 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
th Total Gate Charge - - 16 lo=9.2A
Qgs Gate-to-Source Charge - - 4.4 nC Vos=80V
di Gate-to-Drain ("Miller") Charge - - 7.7 Vas=10V See Fig. 6 and 13 C4)
tam) Turn-On Delay Time - 6.8 - VDD=50V
tr Rise Time - 27 - n s lrr=9.2A
Gem Turn-Off Delay Time - 18 .-. Re=18£2
I. Fall Time -, - 17 - RD=5.2.Q See Figure 10 ©
Lo Internal Drain Inductance - 4.0 - tit(rlJ.ltl,d.') D
nH from package egg
Ls Internal Source inductance - 6.0 - Ind center 6f
die contact tt
Ciss Input Capacitance - 360 - Vas=0V
Cogs Output Capacitance - 150 - pF V95: 25V
Crag ReverseT=ansfer Capacitance - 34 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics .
CCCCCzI - Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 1.3 MQSFET symbol D
(Body Diode) A showing the L,-,)
Iss, Pulsed Source Current - - 10 integral reverge G :1.
(Body Diode) (D p-n junction diode. s,
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, ls=1.3A, VGs=OV ©
tr, Reverse Recovery Time - .130 260 ns TJ=25°C, b=9.2A
G, Reverse Recovery Charge - 0.65 1.3 PC dildt=100AIps co
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
(i) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=22mH
RG=25.Q, lAs=2.6A (See Figure 12)
© ISDSQZA, di/dts11OA/us, VDDSV(BR)DSS.
TJS175°C
(E) Pulse width s; 300 us; duty cycle s2%.
