IRFD110 ,100V Single N-Channel HEXFET Power MOSFET in a HEXDIP packagePD..9.328K
IRFD110
t,tiest,?sii!
IS-R RRectifier
HEXFET® Power MOSFET
. Dynamic dv/dt ..
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IRFD110
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
1rttet,tyiaili'tt,tt,tall
EOR Rectifier
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
o Repetitive Avalanche Rated
o For Automatic Insertion
It End Stackable
0 175°C Operating Temperature
o Fast Switching
PD-9.328K
llRFD1
o Ease of Paralleling
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D l/DSS T.'L'' 100V
rn Rios(on) = th54Q
S ID "dS" 1.0A
on-resistance and coSt-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, I/ss © 10 v 1.0
lo © Tc = 100°C Continuous Drain Current, I/as © 10 V 0.71 A
IDM Pulsed Drain Current CO 8.0
PD © To = 25°C Power Dissipation 1.3 W
I Linear Derating Factor 0.0083 WPC
Vas Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 140 ml
IAH Avalanche Current OD 1.0 A
EAR Repetitive Avalanche Energy Ci) 0.13 md
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
To Operating Junction and -55 to +175
Tsm Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Ram Junction-to-Ambient - - 120 “CNV
IRFD110
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Voo=25V, starting TJ=25°C, L=52mH
RG=2SQ. iAs=2.0A (See Figure 12)
TJS175°C
Parameter Min. Typ, Max. Units Test Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 100 - - V l/tas-MN, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - VPC Reference to 25°C, In: 1mA
Ros(on) Static Drain-to-Source On-Resistance - - 0.54 n VGS=10V, ID=0.60A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=Ves, Irs-- 250uA
gfs Forward Transconductance 0.80 - - S Vos=50V. b--0.60A ©
loss Drain-to-Source Leakage Current - - 25 uA 1/ix=100V, Vas=0V
- - 250 Vos=80V, Vss=0V, TJ=150°C
lass Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 Vos=-20V
th Total Gate Charge - - 8.3 |D=5.6A
Qgs Gate-to-Source Charge - - 2.3 " Vos=80V
di Gate-to-Drain ("Miller") Charge - - 3.8 VGS=10V See Fig. 6 and 13 co
' td(on) Turn-On Delay Time - 6.9 - VDD=50V
tr Rise Time - 16 - ns b=5.6A
tam) Turn-Off Delay Time - 15 - Re=24Q
tf Fall Time - 9.4 - RD=8.4.Q See Figure 10 G)
Lo Internal Drain Inductance - 4.0 - (htlrhmlr/o1.ititnd.') D
nH from package egg
Ls Internal Source Inductance - 6.0 - Ind center Of
die contact 5
Ciss Input Capacitance - 180 - Vss=OV
Coss Output Capacitance' - 81 - pF Ws--- 25V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - __ 1 o' MOSFET symbol D
(Body Diode) . A showing the L,-,
ISM Pulsed Source Current - - 8.0 integral reverse G (tl-l
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, Is=1.0A, VGs=OV ©
tn Reverse Recovery Time - 100 200 ns TJ=25°C, IF=5.6A
arr Reverse Recovery Charge - 0.44 0.88 wc di/dt=100A/gs ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
© Isos5.6A, di/dts75A/ps, VDDSV(BR)DSS,
co Pulse width 5 300 us; duty cycle 52%.
