IRFD024 ,60V Single N-Channel HEXFET Power MOSFET in a HEXDIP packageInternational
TOR RectifierHEXFETO Power MOSFET
. Dynamic dv/dt Rating
. ForAutomatic Insertio ..
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. Dynamic dv/dt Rating
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0 Dynamic dv/dt Rat ..
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IRFD024
60V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Internet
Tait Rectifier
HEXFET8 Power MOSFET
0 Dynamic dv/dt Rating
. ForAutomatic Insertion
. End Stackable
It 175°C Operating Temperature
0 Fast Switching
0 Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD - 9.699B
IRFD024
Voss = 60V
RDS(on) = 0.109
ID = 2.5A
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5
ID @ TA = 100°C Continuous Drain Current, I/ss @ 10V 1.8 A
IDM Pulsed Drain Current C) 20
PD @TA = 25''C Power Dissipation 1.3 W
Linear Derating Factor 0.0083 W/°C
I/ss Gate-to-Source Voltage 1.6 V
EAS Single Pulse Avalanche Energy © 91 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
To Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10sec
Thermal Resistance
Parameter Typ. Max. Units
ROJA Junction-to-Ambient - 120 "C/W
1/28/04
IRFD024
International
TOR Rectifier
Electrical Characteristics tii! Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(anss Drain-to-Source Breakdown Voltage 60 - - V VGS=0V, lo-- 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.061 - VPC Reference to 25°C, In: 1mA
Floswn) Static Drain-to-Source On-Resistance - - 0.10 n Ves=10V, ID=1.5A co
VGS(lh) Gate Threshold Voltage 2.0 - 4.0 V Vos=Vas, ID: 250M
gis Forward Transconductance 0.90 - - S Vns=25V, ID=1.5A ©
loss Drain-to-Source Leakage Current - - 25 ysA Vns=60V, Vss=OV
- - 250 Vos=48V, VGs=0V, To=15tPC
G, Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
q, Total Gate Charge - - 25 19:17A
Qgs Gate-to-Source Charge - - 5.8 NC Vns=48V
di Gate-to-Drain ("Miller") Charge - - 11 Ves=10V See Fig. 6 and 13 Co
tam) Turn-On Delay Time - 13 - Vpo=30V
t, Rise Time - 58 - M Io=17A
lam) Turn-Off Delay Time - 25 - Re=18§2
t1 Fall Time - 42 - RD=1.7Q See Figure 10 ©
Lo Internal Drain Inductance - 4.0 - t,1r"lon.lrn1
nH from package G
Ls Internal Source |nduc1ance - 6.0 - apd center 6f
die contact s
Cass Input Capacitance - 640 - Ves=0V
Cass Output Capacitance - 360 - pF Vos= 25V
Crss Reverse Transfer Capacitance - 79 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 2 5 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current .._. - 20 integral (averse G.
(Body Diode) co p-n junction diode. s
Va, Diode Forward Voltage - - 1.5 V TJ=25°C, ls=2.5A, VGs=0V q)
tn Reverse Recovery Time - 88 180 ns Tr..uyPC, b=17A
G, Reverse Recovery Charge - 0.29 0.64 110 di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
© Isns17A, di/dts140A/us, VDDSV(aR)Dss,
TJS1 75°C
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=16mH © Pulse width s: 300 us; duty cycle s2%.
Ra=25f2, lAs=2.5A (See Figure 12)
