IRFD014 ,60V Single N-Channel HEXFET Power MOSFET in a HEXDIP packaget,Pg,tlge,! PD-9.700A
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HEXFETO Power MOSFET
0 Dynamic dv/dt Rating
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IRFD014
60V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
irtierirtiatiiortall
1:212 Rectifier
PD-9.700A
llRFD014
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 For Automatic Insertion
End Stackable
175°C Operating Temperature
Fast Switching
Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual
drain serves as a thermal link to the mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. Units
19 © To = 25°C Continuous Drain Current, Ves @ 10 V 1.7
lo @ Tc = 100°C Continuous Drain Current, Ves @ 10 V 1.2 A
IDM Pulsed Drain Current co 14
PD @ To = 25°C Power Dissipation 1.3 W
Linear Derating Factor 0.0083 WPC
Ws Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 130 Ind
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
Tg Operating Junction and -55 to +175
Tsra Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Ram Junction-to-Ambient - - 120 °C/W
IRFD014
Electrical Characteristics @ Tu = 25°C (uniess otherwise specified)
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 1 1)
© VDD=25V, starting TJ=25°C, L=52mH
RG=25Q, lAs=1.7A (See Figure 12)
Parameter Min. Typ. Max. Units Test Conditions
V(anwss Drain-to-Source Breakdown Voltage 60 - - V Ves=0V, ID: 25OWA
tNtsssosssltiis Breakdown Voltage Temp. Coefficient - 0.063 - V/°C Reference to 25°C, In: 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.20 n VGs=10V, ID=1.0A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS, ID--- 250gA
grs Forward Transconductance 0.96 - - S Vos=25V. lo--1,0A ©
loss Drain-to-Source Leakage Current - - 25 uA Vios=60V, VGS=OV
_ - -- 250 Vos=48V, Ves=OV, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 Vas=-201/
th Total Gate Charge - _" 11 ltr-MOA
Qgs Gate-to-Source Charge - - 3.1 nC Vns=48V
di Gate-to-Drain ("Miller") Charge - - 5.8 Vas=10V See Fig, 6 and 13 ©
td(on) Turn-On Delay Time - 10 - VDD=30V
tr Rise Time - 50 - ns b=10A
tum) Turn-Off Delay Time - 13 - Rty=24t1
t: Fall Time - 19 - RD=2.7(2 See Figure 10 ©
Lo Internal Drain Inductance - 4.0 - gfxfa 2'21 ') ACE
nH from package a
Ls Internal Source Inductance - 6.0 - Ind center 6f
die contact s
Ciss Input Capacitance - 310 - Ves=0V
Cass Output Capacitance - 160 - PF Vos-- 25V
Crss Reverse Transfer Capacitance - 37 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current _ - 1 7 MOSFET symbol D
_ (Body Diode) ' A showing the 'if)
ISM Pulsed Source Current - - 14 integral reverse iii-i-_
(Body Diode) Ci) p-n junction diode. s
Vso Diode Forward Voltige - - 1.6 V Tr--25oc, Is=1.7A, l/ss-HN ©
tn Reverse Recovery Time - 70 140 ns TJ=25°C, Ip=10A -
er Reverse Recovery Charge - 0.20 0.40 PC di/dt--100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
© Isos1OA, di/dtf90Ahts, VDDSV(BR)DSS,
TJS175°C
© Pulse width S 300 us; duty cycle 32%.
