IRFBG20 ,1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRFBG20 ,1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
RRectifier
PD-9.604A
IRFBG20
HEXFETO Power MOSFET
q Dynamic dv/dt Rati ..
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Absolute Maximum Ratings
TO-220AB
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IRFBG20
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
krtiennatiionall
149R Rectifier
HEXFETO Power MOSFET
q Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Fast Switching
0 Ease of Paralleling
It Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.604A
_ IRFBGZO
ID=1AA
VDSS =. 1 000V
RDS(0n) = 1 19
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter Max. Units
Io @ To = 25°C Continuous Drain Current, I/tss @ 10 V 1.4
In © Tc = 100°C Continuous Drain Current, I/os @ 10 V 0.86 A
IDM Pulsed Drain Current (O 5.6
Po @ To = 25°C Power Dissipation 54 W
Linear Derating Factor 0.43 WPC
Ves Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 200 m)
IAR Avalanche Current C) 1.4 A
EAR Repetitive Avalanche Energy (i) 5.4 mJ
dv/dt Peak Diode Recovery dv/dt © 1.0 V/ns
TJ Operating Junction and -55 to +150
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 tGm)
Thermal Resistance
Parameter Min. Typ. Max, Units
Rac Junction-to-Case - - 2.3
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Rm Junction-to-Ambient - - 62
IRFBG20
Electrical Characteristics tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 1000 - - V Vas=OV, ID: 250%
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 1.2 - VPC Reference to 25°C, ID: 1mA
Ros(on) Static Drain-to-Source On-Resistance - - 11 n VGs=1OV, ID=0.84A ©
l/asm Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, lo: 250PA
gfs Forward Transconductance 1.0 - M--.- S Vos=50V, ID=0.84A ©
loss Drain-to-Source Leakage Current - - 100 “A VDs--1000V, VGS=OV
- - 500 Vos=800V, Vss=OV, TJ=125°C
loss Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - -- -100 Ves=-20V
Ch, Total Gate Charge - - 38 io=1.4A
Qgs Gate-to-Source Charge - - 4.9 nC VDs=400V
di Gate-to-Drain ("Miller") Charge - - 22 Vss--10V See Fig, 6 and 13 ©
tum Turn-On Delay Time - 9.4 - Voo=500V
t, Rise Time - 17 - ns 10:1.4A
td(ofl) Turn-Off Delay Time - 58 - Rtr--18t2
tf Fall Time - 31 - Ro=37OQ See Figure 10 ©
LD Internal Drain Inductance - 4.5 - g ',',t,vrtrJ. 212: ') D
nH from package GE
Ls Internal Source Inductance - 7.5 - Ind center 6t [ii)
die contact s
Ciss Input Capacitance - 500 - VGs=0V
Coss Output Capacitance - 52 - pF Vns=25V
Crss Reverse Transfer Capacitance - 17 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - _ 1.4 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current --.- - 5.6 integral (evers'e G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V TJ=25°C, Is=1.4A, VGs=OV ©
tn Reverse Recovery Time - 130 190 ns TJ=250C, IF=1.4A‘
G, Reverse Recovery Charge -- 0.46 0.69 110 di/dt=100A/ps G)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=5OV, starting TJ=25°C, L=193mH
RG=25£2, lAs=1.4A (See Figure 12)
© ISDS1.4A. di/dts60A/ps, VDDSGOO ,
TJS150°C
© Pulse width 5 300 IIS; duty cycle 32%.
