IRFBE20 ,800V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
RRectifier
PD-9.610A
|RFBE20
HEXFET® Power MOSFET
. Dynamic dv/dt
Rep ..
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0 Dynamic dv/dt R ..
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0 Dynamic dv/dt R ..
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IRFBE20
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
hqternationall
TOR Rectifier
PD-9.610A
IRFBEZO
HEXFET6 Power MOSFET
0 Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D Voss = 800V
FN RDS(on) = 6.59
s ID = 1.8A
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-22OAB
" . Parameter Max. Units
lo Q) To = 25°C Continuous Drain Current, VGs © 10 V 1.8
In © Tc = 100°C Continuous Drain Current, Vas Q) 10 V 1.2 A
IDM Pulsed Drain Current co 7.2
Po o Tc = 25°C Power Dissipation 54 W
Linear Derating Factor 0.43 WPC
Vss Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy © 180 mi
JAR Avalanche Current fi) 1.8 A
I EAR Repetitive Avalanche Energy co 5.4 mJ
\dv/dt Peak Diode Recovery dv/dt © 2.0 V/ns
To Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
- Parameter Min. Typ. Max. Units
IRiuc Junction-to-Case - - 2.3
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
ReJA Junctigg-to-Ambient - - 62
IRFBE20 T ' TOR
Electrical Characteristics tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 800 - - V VGs=0V, lo: 25OWA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.98 - VPC Reference to 25°C, In: 1mA
Roam) Static Drain-to-Source On-Resistance - - 6.5 Q VGs=10V, kr=1.1A ©
Vesuh) Gate Threshold Voltage 2.0 - 4.0 V 1hos=Vss, ID: 25OWA
ggs Forward Transconductance 0.80 - - S Vos=100V, |D=1.1A (O
loss Drain-to-Source Leakage Current - - 100 WA Vos-MMV, I/ss-HN
- - 500 Vos=640V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg Total Gate Charge - - 38 lo=I.8A
Qgs Gate-to-Source Charge - - 5.0 no Vos=400V
di Gate-to-Drain ("Miller") Charge - - 21 VGs=10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 8.2 - VDD=400V
tr Rise Time - 17 - ns ID=1.8A
td(ott) Turn-Off Delay Time - 58 - Rg=18§2
ti Fall Time - 27 - RD=2309 See Figure 10 ©
Ln Internal Drain Inductance -. 4.5 - tt,1vri'illti'nd.') D
nH from package EC )
Ls Internal Source inductance - 7.5 - and center 6f
, die contact s
Ciss Input Capacitance - 530 - VGs=0V
Coss Output Capacitance - 150 - pF Vos=25V
Crss Reverse Transfer Capacitance - 90 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ, Max. Units Test Conditions
ls Continuous Source Current - - 1 8 MOSFET symbol 0
(Body Diode) . A showing the bd)
ISM Pulsed Source Current - - 7.2 integral reverse G fl
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.4 V TJ=25°C, Is=1.8A, Vss=OV (4)
In Reverse Recovery Time - 380 570 ns TJ=25°C, |p=1.8A
Orr Reverse Recovery Charge - 0.94 1.4 wc di/dt=100/Ups C4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(IC) Repetitive rating; pulse width limited by © 15031.8A, dildts80A/ws, VDDSSOO ,
max. junction temperature (See Figure 11) TJS150°C
© VDD=50V, starting TJ=25°C, L=104mH © Pulse width S 300 ps; duty cycle 32%.
Re=259, |As=1.8A (See Figure 12)
