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. Dynamic dv/dt
. Repetitive Av ..
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IRFBC40PBF
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-9.506B
mserriationd,
142R Rectifier _ IRFBC40
HEXFET® Power MOSFET
tt Dynamic dv/dt Rating
tt Repetitive Avalanche Rated
o Fast Switching
o Ease of Paralleling
o Simple Drive Requirements
Voss = 600V
RDS(on) = 1.29
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the T0220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
lo © To = 25°C Continuous Drain Current, Ves @ 10 V 6.2
In © To = 100°C TContinuous Drain Current, Ves @ 10 V 3.9 A
IDM Pulsed Drain Current C) 25
Po @ Tc = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 WPC
Vos Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 570 md
IAR Avalanche Current (i) 6.2 A
EAR Repetitive Avalanche Energy C) 13 md
dv/dt Peak Diode Recovery dv/dt © 3.0 V/ns
T: Operating Junction and -55 to +150
Tsm Storage Temperature Range ot
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 1bfoin (1.1 N-m)
Thermal Resistance
Parameter Min, Typ. Max, Units
RBJC . Junction-to-Case -- - 1 .0
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Ham 3 Junction-to-Ambient - - 62
IRFBC4O
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
IE9!!-
_ Parameter T Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V Vas=OV, lo: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.70 - VPC Reference to 25°C, ID: 1mA
Roswn) Static Drain-to-Source On-Resistance - - 1.2 n Ves=10V. ID=3.7A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, lo-- 25011A
gis Forward Transconductance 4.7 - - S VDs=100V, lo=3.7A ©
loss Drain-to-Source Leakage Current - - 100 PA VDs=600V, 1/ay=0V
- - 500 Vos=480V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss---201/
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg Total Gate Charge _ - 60 10:6.2A
Qgs Gate-to-Source Charge - - 8.3 nC Vns=360V
di Gate-to-Drain ("Miller") Charge - - 30 V¢s=1OV See Fig. 6 and 13 G)
tum) Turn-On Delay Time - 13 - VDD=300V
tr Rise Time - 18 - n s ID=6.2A
tum“) Turn-Off Delay Time - 55 - Rs=9.1 n
ti Fall Time - 20 - Ro=4752 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - it,',t(r('0n.ltiei.') D
nH from package GEL
Ls Internal Source Inductance - 7.5 - Ind center tht
die contact s
Cass Input Capacitance - 1300 - VGs=OV
Coss Output Capacitance - 160 - pF Vos=25V
Crss Reverse Transfer Capacitance - 30 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ, Max. Units Test Conditions
ls Continuous Source Current - - 6 2 MOSFET symbol D
(Body Diode) _ A showing the bd:
ISM Pulsed Source Current - - 25 integral reverse G u
(Body Diode) C1") p-n junction diode. s
Vso Diode Forward Voltage - -- 1.5 V TJ=25°C, Is=6.2A, VGs=OV ©
ta Reverse Recovery Time - 450 940 ns TJ=25°C, |F=6.2A
G, Reverse Recovery Charge -- 3.8 7.9 wc di/dt=100A/pts ©
ton Forward Turn-On Time Intrinsic turn-on lime is neglegible (turn-on is dominated by LS+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=27mH
RG=25Q, |As=6.2A (See Figure 12)
© lsoS6.2A, di/dts80A/rts, VooSWBRmss,
TJS150°C
G) Pulse width S 300 us; duty cycle 52%.
