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IRFBC40L from IR,International Rectifier

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IRFBC40L

Manufacturer: IR

600V Single N-Channel HEXFET Power MOSFET in a TO-262 package

Partnumber Manufacturer Quantity Availability
IRFBC40L IR 710 In Stock

Description and Introduction

600V Single N-Channel HEXFET Power MOSFET in a TO-262 package The IRFBC40L is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** International Rectifier (IR)  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 4.3A (at 25°C)  
- **Pulsed Drain Current (IDM):** 17A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 38W (at 25°C)  
- **On-Resistance (RDS(on)):** 1.8Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 250pF (typical)  
- **Output Capacitance (Coss):** 50pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 15pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 50ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Description:**  
The IRFBC40L is a high-voltage N-Channel MOSFET designed for switching applications. It features low gate charge and fast switching speeds, making it suitable for power supply and motor control applications.  

### **Features:**  
- **High Voltage Capability (600V)**  
- **Low On-Resistance**  
- **Fast Switching Speed**  
- **Improved dv/dt Capability**  
- **Avalanche Energy Specified**  
- **TO-220 Package for Easy Mounting**  

This information is based solely on the manufacturer's datasheet and technical documentation.

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