IRFBC40 ,6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFETIRFBC40®N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220PowerMESH™ MOSFETTYPE V R IDSS DS(on) DIRFBC40 6 ..
IRFBC40A ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD -91885ASMPS MOSFETIRFBC40A®HEXFET Power MOSFET
IRFBC40APBF ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 6 ..
IRFBC40AS ,600V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 6 ..
IRFBC40L ,600V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications because of its low internal connection resistance and can2 D Pak TO-262dissipate ..
IRFBC40LC ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
litre Rectifier IRFBC40LC
HEXFET® Power MOSFET
. Ultra Low Gate Charge
q Re ..
ISL6315CRZ , Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers
ISL6316CRZ , Enhanced 4-Phase PWM Controller with 6-Bit VID Code Capable of Precision rDS(ON) or DCR Differential Current Sensing for VR10 Application
ISL6322CRZ , Four-Phase Buck PWM Controller with Integrated MOSFET Drivers and I2C Interface for Intel VR10, VR11, and AMD Applications
ISL6322CRZ-T , Four-Phase Buck PWM Controller with Integrated MOSFET Drivers and I2C Interface for Intel VR10, VR11, and AMD Applications
ISL6323 ,Hybrid SVI/PVI, Monolithic Dual PWM Hybrid Controller Powering AMD SVI Split-Plane and VI Uniplane Processorsfeatures a multiphase controller to support - Conforms to AMD SVI Specificationsuniplane VDD core v ..
ISL6323IRZ , Hybrid SVI/PVI
IRFBC40
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
IRFBC40N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220
PowerMESH MOSFET TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
August 1998
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 6.2 A, di/dt ≤ 80 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
IRFBC402/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
IRFBC403/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
IRFBC404/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
IRFBC405/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 1: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
IRFBC406/8
