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IRFBC30AL-IRFBC30AS
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD- 91890B
International
a:ciRIectifier SMPS MOSFET IRFBC30AS/L
HEXFET6 Power MOSFET
Applications
. Switch Mode Power Supply (SMPS) Voss Rds(on) max ID
o Uninterruptable Power Supply 600V 2.29 3.6A
o High speed power switching
Benefits
o Low Gate Charge Qg results in Simple
Drive Requirement
. Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
q Fully Characterized Capacitance and
Avalanche Voltage and Current D 2 Pak TO-262
q Effective Coss specified (See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V© 3.6
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V© 2.3 A
IDM Pulsed Drain Current C)Cr) 14
Po @Tc = 25''C Power Dissipation 74 W
Linear Derating Factor 0.69 W/°C
VGS Gate-to-Source Voltage 1 30 V
dv/dt Peak Diode Recovery dv/dt ©© 7.0 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topology:
0 Single transistor Flyback
Notes C) through 6) are on page 10
1
5/4/00
IRFBC30AS/L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, ID = 250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.67 - V/°C Reference to 25°C, ID = 1mA©
Rosom Static Drain-to-Source On-Resistance - 2.2 Q VGS = 10V, ID = 2.2A ©
Vegan) GateThreshold Voltage 2.0 - 4.5 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current _- _- Ji, pA x2: =- 3:31:31 To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 I/ss = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
git Forward Transconductance 2.1 - - S Vos = 50V, ID = 2.2A
09 Total Gate Charge - - 23 ID = 3.6A
Qgs Gate-to-Source Charge - - 5.4 nC V93 = 480V
di Gate-to-Drain ("Miller") Charge - - 11 N/ss = 10V, See Fig. 6 and 13 ©
tu(on) Turn-On Delay Time - 9.8 - VDD = 300V
tr RiseTime - 13 - ns ID = 3.6A
tam) Turn-Off Delay Time - 19 - Rs = 12n
tr Fall Time - 12 - RD = 82n,See Fig. 10 ©
Ciss Input Capacitance - 510 - N/ss = 0V
Coss Output Capacitance - 70 - VDs = 25V
Crss Reverse Transfer Capacitance - 3.5 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 730 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 19 - Veg = 0V, Vos = 480V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 31 - Veg = 0V, Vos = 0V to 480V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 290 mJ
IAR Avalanche CurrentC0 - 3.6 A
EAR Repetitive Avalanche Energy© - 7.4 mJ
Thermal Resistance
Parameter Typ. Max. Units
Roos Junction-to-Case - 1.7 'C/W
RQJA Junction-to-Ambient ( PCB Mounted, steady-state)" - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
b Continuous Source Current - - 3. 6 MOSFETsymbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 14 p-n junction diode. s
VSD Diode Forward Voltage - - 1.6 V To = 25°C, Is = 3.6A, VGS = 0V GD
trr Reverse Recovery Time - 400 600 ns To = 25°C, IF = 3.6A
G, Reverse RecoveryCharge - 1.1 1.7 pC di/dt = 100A/ps ©
tion Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
