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Partno	Mfg	Dc	Qty	Available	Descript
IRFBC30		N/a	600	avai	600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

IRFBC30 ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageIRFBC30®N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220PowerMESH™ΙΙ MOSFETTYPE V R IDSS DS(on) DIRFBC30 ..
IRFBC30A ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply (SMPS)600V 2.2Ω 3.6Al Uninterruptable Po ..
IRFBC30A ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD- 91889ASMPS MOSFETIRFBC30A®HEXFET Power MOSFET
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IRFBC30L ,600V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRFBC30
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFBC30
N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220
PowerMESHΙΙ MOSFET TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH ΙΙ is the evolution of the first
generation of MESH OVERLAY . The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
January 2000
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤3.6 A, di/dt ≤ 60 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
IRFBC30
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
IRFBC30
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
IRFBC30
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
IRFBC30
5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 1: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
IRFBC30
6/8

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