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IRFBC20-IRFBC20.-IRFBC20PBF
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-9.623A
IRFBCZO
Iintetii!atiip!all T
1:212 Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
o Repetitive Avalanche Rated D
o Fast Switching
0 Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-22OAB
Parameter Max, Units
ID © To = 25°C Continuous Drain Current, Vos Q) 10 V 2.2
lo © To = 100°C Continuous Drain Current, N/ss Q) 10 V 1.4 A
IDM Pulsed Drain Current (i) 8.0
PD @ To = 25°C Power Dissipation 50 W
Linear Derating Factor 0.40 WPC
Ves Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy Q) 84 mJ
IAn Avalanche Current co 2.2 A
EAR Repetitive Avalanche Energy Ci) 5.0 mJ
dv/dt Peak Diode Recovery dv/dt © 3.0 V/ns
TU Operating Junction and -55 to +150
TSTS Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 Nom)
Thermal Resistance
Parameter Min. Typ. I Max. Units
ch Junction-to-Case - - 2.5
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
RBJA Junction-to-Ambient - - 62
IRFBC20
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V VGs=OV, ID: 25011A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.88 - V/°C Reference to 2500, ID: 1mA
Roman) Static Drain-to-Source On-Resistance - - 4.4 fl VGs=10V, 10:1.3A ©
VGS(1h) Gate Threshold Voltage 2.0 - 4.0 V Vrrs=Vss, In: 250uA
gig Forward Transconductance 1.4 - - S VDs=50V, ID=1.3A ©
loss Drain-to-Source Leakage Current __ - 100 p1A Vros---600V, Nus=UN
- - 500 VDs=480V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
ck, Total Gate Charge - - 18 |D=2.0A
Qgs Gate-to-Source Charge - - 3.0 no Vos=360V
di Gate-to-Drain ("Miller") Charge - - 8.9 Vss=10V See Fig. 6 and 13 ©
tdm Tum-On Delay Time - 1O - VDD=300V
tr Rise Time - 23 - ns kr=2.OA
tam) Turn-Off Delaymme - 30 - RG=18£2
t; Fall Time - 25 - RD=1SOQ See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - [31erctilnd.') o
nH from package egg)
Ls Internal Source Inductance .e.-. 7.5 - Ind center df
die contact s
Ciss Input Capacitance - 350 - Vds=OV
Coss Output Capacitance - 48 - pF Vos=25V
Crss Reverse Transfer Capacitance - 8.6 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current _ -... 2 2 MOSFET symbol D
(Body Diode) . A showing the Cr,-,
ISM Pulsed Source Current - - 8.0 inte.gral reverse G Il.
(Body Diode) G) p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, ls=2.2A, Vss=OV ©
trr Reverse Recovery Time - 290 580 ns TJ=25°C, IF=2.0A
er Reverse Recovery Charge - 0.67 1.3 wc dildt=1OOA/ps C9
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Voo=50V, starting TJ=25°C. L=31mH
RG=250, IAS---2.2A (See Figure 12)
© ISDSZ2A, di/dtS4OA/ps, VDDSV(BR)DSS,
Tusi50t
© Pulse width 5 300 us; duty cycle 52%.
