IRFBA22N50A ,500V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package MOSFETHEXFET Power MOSFET V R max IDSS DS(on) D Switch Mode Po ..
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IRFBC20
International
1912 Rectifier
-IEXFET® Power MOSFET
. Dynamic dv/dt R ..
IRFBC20. ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
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IRFBC20S ,600V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFBC30 ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageIRFBC30®N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220PowerMESH™ΙΙ MOSFETTYPE V R IDSS DS(on) DIRFBC30 ..
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IRFBA22N50A
500V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package
International
TOR Rectifier
Applications
SMPS MOSFET
PD-91886C
IRFBA22N50A
HEXFET© Power MOSFET
o Switch Mode Power Supply ( SMPS ) VDSS RDS(on) max ID
. Uninterruptible Power Supply 500V 0.239 24A
0 High Speed Power Switching
Benefits
q Low Gate Charge Qg results in Simple
Drive Requirement
. Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness '
0 Fully Characterized Capacitance and
Avalanche Volta e and Current
0 Effective Coss 1'bed)21d (See AN1001) Super-220m
(TO-273AA)
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @10V 24
ID @ Tc = 100°C Continuous Drain Current, VGS @10V 15 A
G, Pulsed Drain Current C) 96
Pro @Tc = 25°C Power Dissipation 340 W
Linear Derating Factor 2.7 Wl°C
VGS Gate-to-Source Voltage , 30 V
dv/dt Peak Diode Recovery dv/dt © 3.4 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Recommended clip force 20 N
Applicable Off Line SMPS Topologies:
0 Full Bridge Converters
q Power Factor Correction Boost
Notes OD through s are on page 8
1
8/15/02
IRFBA22N50A
International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 500 - - V Veg. = 0V, ID = 250pA
RDs(on) Static Drain-to-Source On-Resistance - - 0.23 n VGS = 10V, ID = 13.8A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA I/os = 500V, I/ss = 0V
- - 250 I/os = 400V, l/ss = 0V, TJ = 125°C
I Gate-to-Source Forward Leakage - - 100 “A VGs = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 12 - - S VDs = 50V, lo = 13.8A
Qg Total Gate Charge - - 115 ID = 23A
Qgs Gate-to-Source Charge - - 30 nC VDs = 400V
di Gate-to-Drain ("Miller") Charge - - 50 l/GS = 10V, See Fig. 6 and 13 G)
td(on) Turn-On Delay Time - 20 - VDD = 250V
tr Rise Time - 66 - ns ID = 23A
tam) Turn-Off Delay Time - 46 - Rs = 4.39
k FallTime - 44 - RD = 10.6Q,See Fig. 10 (9
Ciss Input Capacitance - 3400 - VGS = 0V
Coss Output Capacitance - 500 - VDs = 25V
Crss Reverse TransferCapacitance - 17 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 4900 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 130 - VGs = 0V, Vos = 400V, f = 1.0MHz
COSS eff. Effective Output Capacitance - 150 - VGS = 0V, Vros = 0V to 400V S
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 1200 mJ
IAR Avalanche Current© - 24 A
EAR Repetitive Avalanche Energy© - 34 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rax: Junction-to-Case - 0.37
Racs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
RQJA Junction-to-Ambient - 58
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 23 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 92 integral reverse G
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, Is = 23A, VGs = 0V (9
tn Reverse Recovery Time - 500 750 ns To = 25°C, IF = 23A
Q" Reverse RecoveryCharge - 6.4 9.6 pC dildt=100Alps C9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
