IRFBA1405P ,55V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10 ..
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IRFBA1405P
55V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package
International
Tait Rectifier
Typical Applications
Electric Power Steering (EPS)
Anti-Iock Braking System (ABS)
AUTOMOTIVE MOSFET
PD -94111A
|RFBA1405P
HEXFET© Power MOSFET
Vuper Control
Climate Control
Potter Door
eneflts
Advanced Process Technology
Ultra Low On-Resistance G
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
OOOOOWOOOOO
VDSS = 55V
A RDS(on) = 5.0mQ
ID = 174A©
o Repetitive Avalanche Allowed up to TImax
Descri tion
Speefca y designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175°C junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220 TM is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220 TM package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualmcation standard.
These benefits make this design an extremely etMient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Absolute Maximum Ratings
Super-220T"
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 174©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 123© A
G, Pulsed Drain Current (D 680
Pro @Tc = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage l 20 V
EAS Single Pulse Avalanche Energy© 560 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -40 to + 175
TSTG Storage Temperature Range -55 to + 175 ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Recommended clip force 20 N
1
8/14/02
IRFB/VI405P
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.057 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 4.3 5.0 mn VGS = 10V, ID = 101A ©
VGSith) Gate Threshold Voltage 2.0 - 4.0 V VDs = 10V, ID = 250pA
Ts Forward Transconductance 69 - - S Vos = 25V, ID = 110A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, VGS = 0V
- - 250 Vos = 44V, N/ss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
Qg Total Gate Charge - 170 260 ID = 101A
Qgs Gate-to-Source Charge - 44 66 n0 Vos = 44V
di Gate-to-Drain ("Miller") Charge - 62 93 VGS = ION/CO
tdwn) Turn-On Delay Time - 13 - VDD = 38V
tr Rise Time - 190 - ns ID = 110A
td(off) Turn-Off Delay Time - 130 - Rs = 1.19
tt Fall Time - 110 - VGS = 10V (0
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25m) iii) )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5480 - VGS = 0V
Cass Output Capacitance - 1210 - pF I/rss = 25V
Crss Reverse Transfer Capacitance - 280 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 5210 - VGS = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 900 - VGS = ov, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 1500 - VGS = 0V, Vos = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 174© A showing the
ISM Pulsed Source Current - - 680 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Fon/vard Voltage - - 1.3 V Tu = 25°C, Is = 101A, VGS = 0V ©
trr Reverse Recovery Time - 88 130 ns TI, = 25°C, IF = 101A
Qrr Reverse RecoveryCharge - 250 380 nC di/dt = 100/Vps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
Thermal Resistance
Parameter Typ. Max. Units
Raoc Junction-to-Case - 0.45 ''C/W
Recs Case-to-Sink, Flat, Greased Surface 0.50 -
ReJA Junction-to-Ambient - 58
2
