IRFB9N65A ,650V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) Dl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 65 ..
IRFBA1404P ,40V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10 ..
IRFBA1405P ,55V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) packageapplications. Parameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ 10 ..
IRFBA22N50A ,500V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package MOSFETHEXFET Power MOSFET V R max IDSS DS(on) D Switch Mode Po ..
IRFBC20 ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD-9.623A
IRFBC20
International
1912 Rectifier
-IEXFET® Power MOSFET
. Dynamic dv/dt R ..
IRFBC20. ,600V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
ISL6313BCRZ , Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR11 and AMD Applications
ISL6313IRZ , Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR11 and AMD Applications
ISL6315CRZ , Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers
ISL6316CRZ , Enhanced 4-Phase PWM Controller with 6-Bit VID Code Capable of Precision rDS(ON) or DCR Differential Current Sensing for VR10 Application
ISL6322CRZ , Four-Phase Buck PWM Controller with Integrated MOSFET Drivers and I2C Interface for Intel VR10, VR11, and AMD Applications
ISL6322CRZ-T , Four-Phase Buck PWM Controller with Integrated MOSFET Drivers and I2C Interface for Intel VR10, VR11, and AMD Applications
IRFB9N65A
650V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 91815C
International
TOR Rectifier SMPS MOSFET IRFB9N65A
HEXFET© Power MOSFET
Applications
0 Switch Mode PowerSupply (SMPS) Voss RDS(on) max ID
0 Uninterruptible PowerSupply 650V 0.939 8.5A
. High Speed Power Switching
Benefits
o Low Gate Charge Clg results in Simple
Drive Requirement
o Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and
Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10V 8.5
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V 5.4 A
G, Pulsed Drain Current (DO 21
Pro @Tc = 25°C Power Dissipation 167 W
Linear Derating Factor 1.3 W/''C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt ©© 2.8 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 Ibf-in (1.1Nom)
Typical SMPS Topologies
0 Single Transistor Flyback
o Single Transistor Forward
Notes (D through s are on page 8
1
6/21/00
IRFB9N65A
Static @ T J = 25°C (unless otherwise specified)
International
TOR Rectifier
Parameter Min. Typ. Max. Units] Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 650 - - V l/cs = ov, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.67 - V/°C Reference to 25°C, lo = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - - 0.93 n VGS = 10V, ID = 5.1 A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
loss Drain-tim, Leakage Current : : Ji, pA V: =" 'gg,' V2: , g, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 3.9 - - S Vos = 50V, ID = 3.1AO
% Total Gate Charge - - 48 ID = 5.2A
Qgs Gate-to-Source Charge - - 12 nC Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 19 l/cs = 10V, See Fig. 6 and 13 ©©
tdwn) Turn-On Delay Time - 14 - N/oo = 325V
tr Rise Time - 20 - ns ID = 5.2A
tuiott) Turn-Off Delay Time - 34 - Rs = 9.19
tf Fall Time - 18 - Ro = 62Q,See Fig. 10 (43(8)
Ciss Input Capacitance - 1417 - VGS = 0V
Coss Output Capacitance - 177 - Vos = 25V
Crss Reverse Transfer Capacitance - 7.0 - pF f = 1.0MHz, See Fig. 50
Coss Output Capacitance - 1912 - VGS = 0V, Ws = 1.0V, f = 1.0MHz
COSS Output Capacitance - 48 - VGS = 0V, VDs = 520V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 84 - VGS = 0V, Vos = 0V to 520V (90
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 325 mJ
IAR Avalanche Current© - 5.2 A
EAR Repetitive Avalanche Energy0) - 16 ml
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 5.2 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 21 integral reverse G
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V TJ = 25°C, Is = 5.2A, VGS = 0V ©
tn Reverse Recovery Time - 493 739 ns To = 25''C, IF = 5.2A
Qrr Reverse RecoveryCharge - 2.1 3.2 pC di/dt = 100A/ps Coco
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
