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IRFB7446
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package
International
'teti R . fi Strong RFETTM
TOR, ech Ier 1itm'it38y36BmW'
Application HEXFETO Power MOSFET
o Brushed Motor drive applications
q BLDC Motor drive applications D Voss 40V
q Battery powered circuits Rrssmm)typ. 2.6mn
o Half-bridge and full-bridgetopologies max 3.3mf2
o Synchronous rectifier applications G l ... . . 123AOD
o Resonant mode power supplies s D(Silicon Limited)
o OR-ing and redundant power switches I imi 120A
0 DC/DC and AC/DC converters D (PackageL ted)
o DC/AC Inverters
Benefits (it; l:):,
q Improved Gate, Avalanche and Dynamic dV/dt Ruggedness \GD
0 Fully Characterized Capacitance and Avalanche SOA TO 220AB
0 Enhanced body diode dV/dt and dI/dt Capability |RFB'7446PDF
o Lead-Free'
o RoHS Compliant, Halogen-Free*
Gate Drain Source
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
|RFB7446PbF TO-220 Tube 50 |RFB7446PbF
iii" 8 l l l 125
ii,; ID = 70A "ss.
jj. 6 100
c T =125°c E
g "ss,.-........,.'.:.",...'.])' 'i'--,' 75 'ss,,,
's 4 o
9 "s. t:5 50
(f, 2 L5
'b., T J = 25°C 25
2468101214161820 0
25 50 100 125 150 175
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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November 7, 2014
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Absolute Maximum Rating
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 123(D
ID @ To = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 87 A
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (VWe Bond Limited) 120
IDM Pulsed Drain Current © 492
PD @Tc = 25°C Maximum Power Dissipation 99 W
Linear Derating Factor 0.66 W/°C
I/ss Gate-to-Source Voltage i 20 V
ETC; 2,QltlnfleJr,ugstetnu'r1eniange -55 to + 175 ''C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw
10 Ibf-in (1.1 N-m)
Avalanche Characteristics
EAS Single Pulse Avalanche Energy © 111 mJ
EAS(L=1mH) Single Pulse Avalanche Energy © 236
IAR Avalanche Current © . A
. . F 1 , 1 , 2 , 2
EAR Repetitive Avalanche Energy © See lg 5 6 3a 3b mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rm Junction-to-Case - 1.52
Recs Case-to-Sink, Flat Greased Surface 0.50 - °C/W
ROJA Junction-to-Ambient - 62
Static @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250pA
AV
. . . - 2.6 3.3 VGS = 10V, ID = 70A S
D - - -R
Rosmn) Static ran to Source On esistance - 3.9 - m9 VGs = 6.0V, ID = 35 A (9
N/som Gate Threshold Voltage 2.2 3.0 3.9 V VDS = VGS, ID = 100pA
. - - 1.0 Vos =40 V, VGS = 0V
loss Drain-to-Source Leakage Current - - 150 pA VDS =40V,Ves = 0V,TJ =125°C
I Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -20V
RG Gate Resistance - 1.6 - Q
Notes:
co Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
© Repetitive rating; pulse width limited by max. junction temperature.
© Limited by Tomax, starting TJ = 25°C, L = 0.046mH,RG = 509, IAS = 70A, l/ss =10V.
G) ISD S 70A, di/dt S 1174A/ps, VDD S V(SR)oss, TJ S 175°C.
s Pulse width s 400ps; duty cycle 3 2%.
© cu, eff. (TR) is a hxed capacitance that gives the same charging time as Cross while Vos is rising from 0 to 80% Voss.
C) Coss eff. (ER) is a foted capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R, is measured at TJ approximately 90°C.
C9) This value determined from sample failure population, starting TJ = 25°C, L= 1mH, Rs = 509, IAS = 22A, VGS =10V.
Halogen -Free since April 30, 2014
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© 2014 International Rectifier
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November 7, 2014
