IRFB7430 ,40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB packageapplications max. 1.3mΩGResonant mode power suppliesI 409A
IRFB7430
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package
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TOR, Rectifier |RFB74~30PbF
Applications
0 Brushed Motor drive applications HEXFETID Power MOSFET
o BLDC Motor drive applications
0 Battery powered circuits D Voss 40V
. Half-bridge and full-bridge topologies RDS(on) typ. 1.0mQ
o Synchronous rectifier applications G max. 1.3m!)
Resonant mode ower su lies
q . p pp . ID (Silicon Limited) 409ACD
o OR-ing and redundant power switches s
o DC/DC and AC/DC converters lo (Package Limited) 195A
q DC/AC Inverters
Benefits 'ifj,iiiich
0 Improved Gate, Avalanche and Dynamic dV/dt "s, A,s
Ruggedness G
0 Fully Characterized Capacitance and Avalanche
TO-220AB
SOA . . . IRFB7430PbF
Enhanced body diode dV/dt and dI/dt Capability
o Lead-Free
RoHS Compliant, Halogen-Free' G D. s
Gate Drain Source
Ordering Information
Base Part Number Package Type Standard Pack Complete Part Number
Form Quantity
IRFB7430PbF TO-220 Tube 50 IRFB7430PbF
a 6.0 . . 500
g ID = 100A
8 / Limited By Package
.,fsi. 400 - "
.3 A - . n
65 4.0 (E " 7/
'r', T J" 125°C fl, 's
”3 g 200 _
(ii'' 2.0 d _
E' l - N,
5 T J =25°c
n: 0.0 O
4 6 8 IO 12 14 16 18 20 25 50 75 100 125 150 175
T ,Case Tem erature °C
VGS Gate -to -Source Voltage (V) C p ( )
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature
ll © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015
I‘S'QR
|RFBV4'30PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 409CO
ID @ To = 100°C Continuous Drain Current, Ves @ 10V (Silicon Limited) 289© A
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V (Wire Bond Limited) 195
IDM Pulsed Drain Current © 1524
PD @Tc = 25°C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 W/°C
Vss Gate-to-Source Voltage i 20 V
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1 .6mm from case) 300
Mounting torque, 6-32 or M3 screw 10lbt. in (1.1 N. m)
Avalanche Characteristics
EAs (Thermallylimited) Single Pulse Avalanche Energy © 760 md
EAS (Thermallylimited) Single Pulse Avalanche Energy © 1452
IAR Avalanche Current © See Fig. 14, 15, 22a, 22b A
EAR Repetitive Avalanche Energy (D mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rm Junction-to-Case - 0.40
Recs Case-to-Sink, Flat Greased Surface 0.50 - °C/W
RGJA Junction-to-Ambient - 62
Static @ TU = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V I/ss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.014 - V/°C Reference to 25°C, lo = 1.0mA©
R Static Drain-to-Source On-Resistance - 1.0 1.3 mn Vss = 1ov, ID = 100A ©
DS(on) - 1.2 - I/ss = 6.0V, ID = 50A s
VGSW Gate Threshold Voltage 2.2 - 3.9 V Vos = Vest ID = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 40V, Vss = 0V
- - 150 Vos = 40V, Vss = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
Rs Internal Gate Resistance - 2.1 - fl
Notes:
C) Calculated continuous current based on maximum allowablejunction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Referto AN-1140)
© Repetitive rating; pulse width limited by max. junction
temperatu re.
(3 Limited by TJmaX, starting TJ = 25°C, L = 0.15mH
Re = 509, lAs =100A, l/es =10V.
© ISD S 100A, di/dt S 990A/us, VDD S V(BR)DSS! Tu S 175°C.
co Pulse width S 400ps; duty cycle S 2%.
© Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from O to 80% Voss.
co Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDs is rising from O to 80% Voss.
Re is measured at Tu approximately 90°C..
© Limited by TJmax, starting Tu = 25°C, L =1mH, Rs = 509, IAS; = 54A,
Vas =1OV.
Halogen -Free since April 30, 2014
© 2015 International Rectifier
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February 2,2015
