IRFB61N15DPBF ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 0.032Ω 60A Motor Control U ..
IRFB7430 ,40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB packageapplications max. 1.3mΩGResonant mode power suppliesI 409A
IRFB61N15DPBF
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
SMPS MOSFET
lRFl361N15DPbF
HEXFET® Power MOSFET
PD- 95621
Applications
q High frequency DC-DC converters Voss RDS(on) max In
. Motor Control 0-0329 60A
o Uninterrutible Power Supplies
0 Lead-Free
Benefits
o Low Gate-to-Drain Charge to Reduce Pt
Switching Losses t. ' rrrt'
. Fully Characterized Capacitance Including 'ii1ftiijf.,.:,
Effective Coss to Simplify Design, (See 'hi'::':'
App. Note AN1001)
o Fully Characterized Avalanche Voltage
and Current TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 60
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 42 A
IDM Pulsed Drain Current (D 250
Po @TA = 25°C Power Dissipation 2.4 W
PD @Tc = 25°C Power Dissipation 330
Linear Derating Factor 2.2 W/°C
Ves Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 3.7 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RQJA Junction-to-Ambient - 62
Notes O) through © are on page 8
1
8/2/04
llRFl361 N15DPbF International
TOR Rectifier
Static © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - -- V Vss = 0V, ID = 250uA
AV(BF|)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.18 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.032 Q l/ss = 10V, ID = 36A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V VDS = I/ss, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 PA Vos = 150V, Vss = 0V
- - 250 Vos = 120V, l/tss = 0V, T, = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 30V
Gate-to-Source Reverse Leakage - - -1OO VGS = -30V
Dynamic @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 22 - - S Vros = 50V, ID = 37A
% Total Gate Charge - 95 140 ID = 37A
Qgs Gate-to-Source Charge - 26 39 I Vos = 120V
di Gate-to-Drain ("Miller") Charge - 45 68 l/ss = 10V,
tri(on) Turn-On Delay Time - 18 - VDD = 75V
tr Rise Time - 110 - ns lo = 37A
td(off) Turn-Off Delay Time - 28 - Rs = 1.89
tf Fall Time - 51 - Vss = 10V (9
Ciss Input Capacitance - 3470 - Vas = 0V
Coss Output Capacitance - 690 - Vos = 25V
Crss Reverse Transfer Capacitance - 150 - pF f = 1.0MHz
Coss Output Capacitance - 4600 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 310 - VGS = 0V, Vos = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 580 - Vss = 0V, VDS = 0V to 120V (9
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 520 mJ
IAR Avalanche Current© - 37 A
EAR Repetitive Avalanche Energy© - 33 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ _ 60 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 250 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 37A, Vss = 0V CO
trr Reverse Recovery Time - 180 270 ns Tu = 25°C, IF = 37A
Qrr Reverse RecoveryCharge - 1340 2010 nC di/dt = 1OOA/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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