IRFB59N10DPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D UPS / Motor Control Inverters 1 ..
IRFB61N15D ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters150V 0.032Ω 60Al Motor Controll U ..
IRFB61N15DPBF ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 0.032Ω 60A Motor Control U ..
IRFB7430 ,40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB packageapplications max. 1.3mΩGResonant mode power suppliesI 409A
IRFB59N10DPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 95378
Infernohqrjol IRFB59N10DPbF
TOR Rectifier SMPS MOSFET IRFS59N10DPbF
IRFSL59N'10DPbF
Applications HEXFET Power MOSFET
q High frequency DC-DC converters
q UPS / Motor Control Inverters
VDss RDS(on) max ID
. Lead-Free 100V 0.0259 59A
Benefits
o Low Gate-to-Drain Charge to Reduce " p, I 'git,
Switching Losses iijjiiic) ' V i'sre'f 'Rrs'- ',
. Fully Characterized Capacitance Including 'ri):, _ "',)w, '
Effective Coss to Simplify Design, (See
App. Note AN1001)
o Fully Characterized Avalanche Voltage
and Current
TO-220AB D2Pak TO-262
IRFB59N10D IRFS59N10D IRFSL59N10D
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 59
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 42 A
IDM Pulsed Drain Current (D 236
PD @TA = 25°C Power Dissipation (D 3.8 W
PD @Tc = 25°C Power Dissipation 200
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 3.3 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© 10 Ibf-in (1 .1N-m)
Typical SMPS Topologies
o Half-bridge and Full-bridge DC-DC Converters
o Full-bridge Inverters
Notes Ci) through (D are on page 11
1
06/07/04
lRFB/lRFS/lRFSL59N10DPbF
International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.11 - 1//''C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.025 Q VGS = 10V, ID = 35.4A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V VDs = VGs, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 100V, VGS = 0V
- - 250 Vros = 80V, VGS = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 18 - - S Vros = 50V, ID = 35.4A
09 Total Gate Charge - 76 114 ID = 35.4A
Qgs Gate-to-Source Charge - 24 36 nC l/ns = 80V
di Gate-to-Drain ("Miller") Charge - 36 54 V95 = 10V, (9
tum...) Turn-On Delay Time - 16 - VDD = 50V
tr Rise Time - 90 - ns ID = 35.4A
tam) Turn-Off Delay Time - 20 - Rs = 2.59
tf Fall Time - 12 - VGS = 10V (9
Ciss Input Capacitance - 2450 - VGS = 0V
Coss Output Capacitance - 740 - l/ns = 25V
Crss Reverse Transfer Capacitance - 190 - pF f = 1.0MHz©
Coss Output Capacitance - 3370 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 390 - VGS = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 690 - VGs = 0V, Vros = 0V to 80V Cs)
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 510 m]
IAR Avalanche Current0D - 35.4 A
EAR Repetitive Avalanche Energy© - 20 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
ROJA Junction-to-Ambient© - 62
RQJA Junction-to-Ambient® - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 59 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 236 integral reverse G
(Body Diode) OD p-n junction diode. s
V5.3 Diode Forward Voltage - - 1.3 V To = 25°C, Is = 35.4A, VGS = 0V Ci)
trr Reverse Recovery Time - 130 200 ns To = 25°C, IF = 35.4A
Qrr Reverse RecoveryCharge - 0.75 1.1 pC di/dt = 100A/ps (4)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
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