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IRFB4610PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
q High Efficiency Synchronous Rectification in SMPS
o Uninterruptible Power Supply
0 High Speed Power Switching
. Hard Switched and High Frequency Circuits
PD - 95936C
lRFB4610PbF
IRFS4610PbF
llRFSL4610PbF
HEXFET® Power MOSFET
Benefits
q Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
o Fully Characterized Capacitance and Avalanche
Voss 100V
RDS(on) typ.1 1 m9
max. 14mg)
ID 73A
SOA \ \.,__ . l, CS I-,. 1598
Enhanced body diode dV/dt and dI/dt Capability . ‘DS GD T 'D
Lead-Free G G
TO-220AB D2Pak TO-262
IRFB4610PbF IRFS4610PbF IRFSL4610PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
|D @ TC = 25°C Continuous Drain Current, Vss @ 10V 73 A
|D @ Tc = 100°C Continuous Drain Current, N/ss @ 10V 52
G, Pulsed Drain Current © 290
PD @Tc = 25°C Maximum Power Dissipation 190 W
Linear Derating Factor 1.3 w/oc
Vss Gate-to-Source Voltage i 20 V
dV/dt Peak Diode Recovery (3) 7.6 V/ns
Tu Operating Junction and -55 to + 175 I
Tsms Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1 .1N-m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy C) 370 mJ
IAR Avalanche Current OD See Fig. 14, 15, 16a, 16b, A
EAR Repetitive Avalanche Energy GD mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.77
Recs Case-to-Sink, Flat Greased Surface ,TO-220 0.50 - °C/W
Fu, Junction-to-Ambient, TO-220 - 62
ReJA Junction-to-Ambient (PCB Mount) , D2Pak COO) - 40
1
09/16/10
IRF/B/S/SL4610PbF
International
TOR Rectifier
Static © T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
AmeDss/ATJ Breakdown Voltage Temp. Coefficient - 0.085 - V/°C Reference to 25°C, ID = 1mAOD
RDSM Static Drain-to-Source On-Resistance - 11 14 mn Vss = 10V, ID = 44A Ci)
Vssim) Gate Threshold Voltage 2.0 - 4.0 V l/os = VGS, ID = 100PA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, Vas = 0V
- - 250 l/rss = 100V, Vas = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 200 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 l/ss = -20V
Rs Gate Input Resistance - 1.5 - (2 f-- 1MHz, open drain
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 73 - - S l/os = 50V, ID = 44A
Qg Total Gate Charge - 90 140 no ID = 44A
Qgs Gate-to-Source Charge - 20 - l/os = 80V
di Gate-to-Drain ("Miller") Charge - 36 - Vss = 10V GD
taan) Turn-On Delay Time - 18 - ns VDD = 65V
t, Rise Time - 87 - lo = 44A
td(off) Turn-Off Delay Time - 53 - Re = 5.69
tf Fall Time - 70 - Vas = 10V ©
Ciss Input Capacitance - 3550 - pF l/ss = 0V
Coss Output Capacitance - 260 - VDS = 50V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 330 - Vas = 0V, I/rs = 0V to 80V (0, See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related) - 380 - Vss = 0V, Vos = 0V to 80V CO, See Fig. 5
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 73 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 290 integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 v TJ = 25°C, Is = 44A, Vas = OV ©
t,, Reverse Recovery Time - 35 53 ns T J = 25°C VR = 85V,
- 42 63 TJ = 125°C IF = 44A
Q,, Reverse Recovery Charge - 44 66 nC T J = 25°C di/dt = 100A/ps ©
- 65 98 T J = 125°C
Ima, Reverse Recovery Current - 2.1 - A T J = 25°C
L, Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting Tu = 25°C, L = 0.39mH
Re = 259, IAS = 44A, Vas =1OV. Part not recommended for use
above this value.
© Iso f 44A, di/dt s 660A/ps, VDD s V(BR)DSS, To s: 175°C.
CD Pulse width I 400ps; duty cycle s: 2%.
s Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% Voss.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Cass while Vos is rising from 0 to 80% Voss.
C) When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rs is measured at Tu approximately 90°C
