IRFS4610 ,IRFB4610 IRFS4610 IRFSL4610ApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMPSUninterruptib ..
IRFS4710 ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters100V 0.014Ω 75Al Motor Controll U ..
IRFS4710PBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters100V 0.014Ω 75A Motor Control U ..
IRFS520A ,N-CHANNEL POWER MOSFETFEATURESBV = 100 VDSS Avalanche Rugged TechnologyΩR = 0.2DS(on) Rugged Gate Oxide Tec ..
IRFS52N15D ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 0.032Ω 60ABenefits Low Gate ..
IRFS52N15DPBF , HEXFET Power MOSFET
ISL9014IRGCZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRJMZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRKCZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRKFZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRKJZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRNFZ , Dual LDO with Low Noise, Low IQ, and High PSRR
IRFB4610-IRFS4610
IRFB4610 IRFS4610 IRFSL4610
International
TOR Rectifier
Applications
o High Efficiency Synchronous Rectification in SMPS
PD - 96906B
lRFB4610
llRFS4610
llRFSL4610
HEXFET® Power MOSFET
o 1ni.nttrrupti.ble Power Supply Voss 100V
o High Speed Power Switching
0 Hard Switched and High Frequency Circuits RDS(on) typ. 11mg
Benefits G max. 14mf2
0 Improved Gate, Avalanche and Dynamic dV/dt ID 73A
Ruggedness
o Fully Characterized Capacitance and Avalanche
0 Enhanced body diode dV/dt and dl/dt Capability .. 'jii):t: dai,),) tifii)s))
1f .1", I-, "., x u,
Nt \ l "ttii; _ "
G D s G D s G D s
TO-220AB D2Pak TO-262
IRFB4610 IRFS461O IRFSL461O
Absolute Maximum Ratings
Symbol Parameter Max. Units
|D @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 73 A
|D @ Tc = 100°C Continuous Drain Current, I/ss @ 10V 52
G, Pulsed Drain Current © 290
PD @Tc = 25°C Maximum Power Dissipation 190 W
Linear Derating Factor 1.3 W/°C
l/ss Gate-to-Source Voltage A 20 V
dV/dt Peak Diode Recovery © 7.6 V/ns
Tu Operating Junction and -55 to + 175 I
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 1OIb-in (1 .1N-m)
Avalanche Characteristics
EAS(Thermallylimited) Single Pulse Avalanche Energy © 370 mJ
IAR Avalanche Current co See Fig. 14, 15, 16a, 16b, A
EAR Repetitive Avalanche Energy (9 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.77
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - 'C/W
RNA Junction-to-Ambient, TO-22O - 62
RM Junction-to-Ambient (PCB Mount) , D2Pak ©© - 40
1
11/3/04
IRF/B/S/SL4610
International
TOR Rectifier
Static © T,, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V I/es = 0V, ID = 250pA
AV
Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.085 - V/°C Reference to 25°C, ID = 1mAO
RDS(on) Static Drain-to-Source On-Resistance - 11 14 m9 I/ss = 10V, ID = 44A 6)
VGSW Gate Threshold Voltage 2.0 - 4.0 V Ihos = Vss, ID = 100pA
lrss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, Vas = 0V
- - 250 Vos = 100v, I/ss = OV, Tr, = 125°C
lass Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
Rs Gate Input Resistance - 1.5 - Q f = 1MHz, open drain
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 73 - - S Vos = 50V, ID = 44A
q, Total Gate Charge - 90 140 nC ID = 44A
Qgs Gate-to-Source Charge - 20 - V05 = 80V
di Gate-to-Drain ("Miller") Charge - 36 - Vas = 10V ©
td(on) Turn-On Delay Time - 18 - ns Vor) = 65V
t, Rise Time - 87 - ID = 44A
td(ott) Turn-Off Delay Time - 53 - RG = 5.69
t, Fall Time - 70 - I/ss = 10V ©
Ciss Input Capacitance - 3550 - pF Vss = 0V
Coss Output Capacitance - 260 - Vos = 50V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz
Cass eff. (ER) Effective Output Capacitance (Energy Related) - 330 - Ves = ov, VDS = 0V to 80V ©, See Fig.11
cu, eff. (TR) Effective Output Capacitance (Time Related) - 380 - I/ss = 0V, Vos = 0V to 80V s, See Fig. 5
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 73 A MOSFET symbol D
(Body Diode) showing the G
ISM Pulsed Source Current - - 290 integral reverse s
(Body Diode) C) p-n junction diode.
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 44A, Vss = 0V ©
trr Reverse Recovery Time - 35 53 ns T, = 25°C I/n = 85V,
- 42 63 TJ = 125°C IF = 44A
a,, Reverse Recovery Charge - 44 66 nC Tu = 25°C di/dt = 100A/ps ©
- 65 98 T J = 125°C
IRHM Reverse Recovery Current - 2.1 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Ci) Repetitive rating; pulse width limited by max. junction
temperature.
C) Limited by TJmax, starting Tu = 25°C, L = 0.39mH
RG = 259, IAS = 44A, Vas =1OV. Part not recommended for use
above this value.
© Iso S 44A, di/dt S 660A/ps, VDD f 1/eosss, Tu S 175°C.
GD Pulse width I 400ps; duty cycle s: 2%.
© Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while Vros is rising from O to 80% V035.
© Goss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while Vos is rising from Oto 80% Voss-
© When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Ro is measured at T: approximately 90''C
