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IRFB4410-IRFS4410-IRFSL4410
HEXFET Power MOSFET
International
TOR Rectifier
Applications
o High Efficiency Synchronous Rectification in SMPS
o Uninterruptible Power Supply
PD - 96902A
lRFB4410
llRFS4410
llRFSL4410
HEXFET® Power MOSFET
o High Speed Power Switching VDSS 100V
0 Hard Switched and High Frequency Circuits RDS(0n) typ. 8.0mQ
Benefits G max. 10mn
0 Improved Gate, Avalanche and Dynamic dV/dt s '0 96A
Ruggedness
o Fully Characterized Capacitance and Avalanche
0 Enhanced body diode dV/dt and dl/dt Capability .. 'jii):t: 14iit tifii)s))
"s, l "ttii; . v
G D s G D s G D s
TO-220AB D2Pak TO-262
IRFB4410 IRFS4410 |RFSL441O
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V 96CO A
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 680D
lm, Pulsed Drain Current © 380
PD @Tc = 25°C Maximum Power Dissipation 250 W
Linear Derating Factor 1.6 W/°C
Vas Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery © 19 V/ns
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10llyin (1 .1N-m)
Avalanche Characteristics
EAS(Thermallylimited) Single Pulse Avalanche Energy © 220 mJ
IAR Avalanche Current OD See Fig. 14, 15, 16a, 16b A
EAR Repetitive Avalanche Energy co mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case © - 0.61
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - "C/W
ReJA Junction-to-Ambient, TO-220 © - 62
RNA Junction-to-Ambient (PCB Mount) , D2Pak ©© - 40
1
11/4/04
|RFB4410/IRFS4410/IRFSL441O
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(Bmss Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, lo = 250pA
AV
RDs(on) Static Drain-to-Source On-Resistance 8.0 10 mg Vss = 10V, ID = 58A (S)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos; = Vss, ID = 150pA
loss Drain-to-Source Leakage Current - 20 pA VDS = 100V, l/as = 0V
- - 250 l/rss = 100V, Vas = 0V, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 200 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
Re Gate Input Resistance - 1.5 - Q f= 1MHz, open drain
Dynamic tii) T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 120 - - S 1has = 50V, ID = 58A
Qg Total Gate Charge - 120 180 nC ID = 58A
Qgs Gate-to-Source Charge - 31 - VDS = 80V
di Gate-to-Drain ("Miller") Charge - 44 - Vss = 10V ©
tam) Turn-On Delay Time - 24 - ns VDD = 65V
t, Rise Time - 80 - ID = 58A
td(oti) Turn-Off Delay Time - 55 - RG = 4.1 Q
t, Fall Time - 50 - I/ss = 10V ©
Ciss Input Capacitance - 5150 - pF Vss = 0V
Coss Output Capacitance - 360 - VDS = 50V
Crss Reverse Transfer Capacitance - 190 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 420 - I/ss = 0V, VDs = 0V to 80V co, See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 500 - I/ss = 0V, Vos = 0V to 80V ©, See Fig. 5
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 96(D A MOSFET symbol a
(Body Diode) showing the
ISM Pulsed Source Current - - 380 A integral reverse G
(Body Diode) C) p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 58A, Vss = 0V s
in Reverse Recovery Time - 38 56 ns TJ = 25°C VR = 85V,
- 51 77 To = 125°C IF = 58A
a,, Reverse Recovery Charge - 61 92 nC Tu = 25°C di/dt = 100A/ps co
- 110 170 TJ=125°C
IRRM Reverse Recovery Current - 2.8 - A To = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
CO Calculated continuous current based on maximum allowable junction © Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmaX, starting Tu = 25°C, L = 0.14mH
Rs = 259, Me = 58A, Vas =10V. Part not recommended for use
above this value.
© ISD S 58A, di/dt S 650A/ps, VDD S V(BR)DSS: Tu S 175°C.
(9 Pulse width 5 400ps; duty cycle S 2%.
as Coss while Vros is rising from O to 80% V035.
Cr) Goss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while Vos is rising from 0 to 80% Voss-
When mounted on 1" square PCB (FR-4 or (3-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994.
© Ro is measured at T: approximately 90°C.
