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IRFB4332PBF
250V Single N-Channel Plasma Display Panel HEXFET Power MOSFET in a TO-220AB package
PD - 97099A
International
TOR Reciiil er PDP SWITCH IR FB4332 Pb F
Features K P t
. Advanced Process Technology . ey arame ers
. Key Parameters Optimized for PDP Sustain, Vos min 250 V
Energy Recovery and Pass Switch Applications Vos (Avaanche)typ. 300 V
. Low EPULSE Rating to Reduce Power RDS(0N) typ. @ 10V 29 mg
Dissipation in PDP Sustain, Energy Recovery T, max 175 DC
and Pass Switch Applications
. Low Q; for Fast Response
. High Repetitive Peak Current Capability for
Reliable Operation D
. Short Fall & Rise Times for Fast Switching
.175°C Operating Junction Temperature for
Improved Ruggedness ' A _ -, _
. Repetitive Avalanche Capability for Robustness G ". _ _,''' s
and Reliability " GD
s TO-22OAB
Gate Drain Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter Max. Units
Vss Gate-to-Source Voltage :30 V
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 60 A
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 42
IBM Pulsed Drain Current CO 230
lm, @ To = 100°C Repetitive Peak Current S© 120
PD @Tc = 25°C Power Dissipation 390 W
PD @To = 100°C Power Dissipation 200
Linear Derating Factor 2.6 W/°C
TJ Operating Junction and -40 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10lb-in (1 .1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case © - 0.38
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
Fu, Junction-to-Ambient (D - 62
Notes (D through © are on page 8
1
9/8/08
IRFB4332PbF
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 250 - - V Vas = OV, '0 = 250uA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 170 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 29 33 mf2 I/ss = 10V, '0 = 35A ©
vegan) Gate Threshold Voltage 3.0 - 5.0 v VDs = Ves. ID = 250uA
AVGs(m)/ATJ Gate Threshold Voltage Coefficient - -14 - mV/°C
loss Drain-to-Source Leakage Current - - 20 PA Vos = 250V, I/ss = 0V
- - 1.0 mA Vos = 250V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 100 - - S Vos = 25V, lo = 35A
09 Total Gate Charge - 99 150 nC VDD = 125V, k, = 35A, l/ss = 10V@
di Gate-to-Drain Charge - 35 -
ts! Shoot Through Blocking Time 100 - - ns VDD = 200V, l/tss = 15V, Re: 4.79
L = 220nH, C= 0.3pF, Vss = 15V
EPULSE Energy per Pulse - 520 - pd VDS = 200V, Rs-- 5.19, To = 25°C
L = 220nH, C= 0.3pF, N/es = 15V
- 920 - Vos = 200v, Re: 5.1g, TJ = 100°C
Ciss Input Capacitance - 5860 - I/ss = 0V
Coss Output Capacitance - 530 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz,
Cass eff. Effective Output Capacitance - 360 - Vss = 0V, VDS = 0V to 200V
u, Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) ,/i"r,-t,
Ls Internal Source Inductance - 7.5 - from package 6%, /
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 230 mJ
EAR Repetitive Avalanche Energy Ci) - 39 mJ
VDS(Avaemche) Repetitive Avalanche Voltage OD 300 - V
IAS Avalanche Current © - 35 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ To = 25°C Continuous Source Current - - 60 MOSFET symbol D
(Body Diode) A showing the L-a,
ISM Pulsed Source Current - - 230 integral reverse G E
(Body Diode) co p-n junction diode. e
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C. ls = 35A, Ves = 0V ©
trr Reverse Recovery Time - 190 290 ns Tu = 25°C. IF = 35A, VDD = 50V
Q,, Reverse Recovery Charge - 820 1230 nC di/dt = 1OOA/ps ©
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