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IRFB4310Z-IRFB4310ZPBF-IRFS4310Z-IRFS4310ZTRLPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International PD-97115D
TOR Rectifier IRFB4310ZPbF
llRFS4310ZPbF
IF1FSL4310ZPbF
HEXFET® Power MOSFET
Ap.litia.e...nf . . . . D Voss 100V
0 High Efficiency Synchronous Rectification In SMPS
o Uninterruptible Power Supply RDson) typ. 4.8mQ
It High Speed Power Switching . ‘ max. 6.0mQ
q Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A co
Benefits s ID (Package Limited) 120A
0 Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness u, D D
0 Fully Characterized Capacitance and Avalanche ', "1tiiiih @
SOA 'strc) \. "Rir'r'ii: --., _ (""
0 Enhanced body diode dV/dt and dl/dt Capability N, ,‘Ds l bs ", C "f “D8
o Lead-Free G G , G
TO-220AB D2Pak TO-262
1RFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
b @ TC = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 1270D A
lr, @ Tc = 100°C Continuous Drain Current, Vai; @ 10V (Silicon Limited) 90CO
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Wire Bond Limited 120
IDM Pulsed Drain Current © 560
PD @TC = 25°C Maximum Power Dissipation 250 W
Linear Derating Factor 1.7 W/oC
l/ss Gate-to-Source Voltage t 20 V
dv/dt Peak Diode Recovery © 18 V/ns
T, Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb'in (1 .1N'm)
Avalanche Characteristics
EAS(Thermallylimi1ed) Single Pulse Avalanche Energy © 475 mJ
IAR Avalanche Current co See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy s mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Fhuc Junction-to-Case © - 0.6
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °C/W
RBJA Junction-to-Ambient, TO-220 © - 62
Rm Junction-to-Ambient (PCB Mount) , D2Pak 0C9) - 40
1
4/23/12
lRFB/S/SL4310ZPbF
International
Static © TJ = 25°C (unless otherwise specified) TOR Rectifier
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, ID = 5mA©
R050)”, Static Drain-to-Source On-Resistance - 4.8 6.0 m9 Vas = 10V, ID = 75A ©
VSS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = I/ss, ID = 150pA
loss Drain-to-Source Leakage Current - - 2O pA VDS = 100V, Vss = 0V
- - 250 Vos = 80V, Vas = OV, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
Rs Internal Gate Resistance - 0.7 - Q
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 150 - - S Vos = 50V, ID = 75A
Qg Total Gate Charge - 120 170 no ID = 75A
Qgs Gate-to-Source Charge - 29 - l/ns =50V
di Gate-to-Drain ("Miller") Charge - 35 Vas = 10V s
stnc Total Gate Charge Sync. (Qg - di) - 85 - ID = 75A, Vos =0V, l/ss = 10V
tom Turn-On Delay Time - 20 - ns Va, = 65V
t, Rise Time - 60 - ID = 75A
tom Turn-Off Delay Time - 55 - Rs = 2.79
t, Fall Time - 57 - Vss = 10V s
Ciss Input Capacitance - 6860 - pF Vas = 0V
Coss Output Capacitance - 490 - VDS = 50V
Crss Reverse Transfer Capacitance - 220 - f = 1.0MHz, See Fig. 5
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 570 - Vas = 0V, Vos = 0V to 80V O, See Fig. 11
cu, eff. (TR) Effective Output Capacitance (Time Related)© - 920 - Vas = 0V, I/os = 0V to 80V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 127O A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 560 A integral reverse G
(Body Diode) © p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V T, = 25°C, ls = 75A, Vss = 0V s
trr Reverse Recovery Time - 40 ns T J = 25°C l/n = 85V,
- 49 TJ = 125°C IF = 75A
Q,, Reverse Recovery Charge - 58 nC T J = 25°C di/dt = 100A/ps Cs)
- 89 To = 125°C
|RRM Reverse Recovery Current - 2.5 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
(O Calculated continuous current based on maximum allowable junction CO Pulse width 3 400ps; duty cycle S 2%.
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting To = 25°C, L = 0.28mH
Rs = 259, IAS = 58A, Vss =1OV. Part not recommended for use
above the Eas value and test conditions.
co ISD S 75A, di/dt S 600A/ps, VDD S V(BR)DSS1 Tu S1750C.
© Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDs is rising from 0 to 80% Vass.
© Cass eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDs is rising from O to 80% Voss.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
© R9 is measured at To approximately 90°C
