IRFB4310 ,HEXFET Power MOSFETApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMPSUninterruptib ..
IRFB4310G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Halogen-Free packageApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMPSUninterruptib ..
IRFB4310PBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRFB4310PbFIRFS4310PbFIRFSL4310PbF
IRFB4310Z ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV100VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.4.8mDS(on)Uninte ..
IRFB4310ZGPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Halogen-Free packageApplicationsDV100VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.4.8m
IRFB4310
HEXFET Power MOSFET
International
TOR Rectifier
Applications
o High Efficiency Synchronous Rectification in SMPS
PD - 96894
lRFB4310
llRFS4310
llRFSL4310
HEXFET® Power MOSFET
o Uninterruptible Power Supply V 100V
o High Speed Power Switching DSS
0 Hard Switched and High Frequency Circuits Ros(on) typ. 5.6mQ
Benefits G max. 7.0mQ
0 Worldwide Best RDs(on) in TO-220 . ID 140A
. Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
. Fully Characterized Capacitance and Avalanche
SOA "itiiit: dai,),) tifii)s))
. Enhanced body diode dV/dt and dl/dt Capability \‘fc \__ \57‘3'1 I-, "u. s..'"
\ q l I v
G D s G D s G D s
TO-220AB D2Pak TO-262
IRFB4310 IRFS431O IRFSL431O
Absolute Maximum Ratings
Symbol Parameter Max. Units
|D @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 1400) A
|D @ Tc = 100°C Continuous Drain Current, I/ss @ 10V 97 C)
G, Pulsed Drain Current © 550
PD @Tc = 25°C Maximum Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
l/ss Gate-to-Source Voltage A 20 V
dV/dt Peak Diode Recovery © 14 V/ns
Tu Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1 .1N'm)
Avalanche Characteristics
EAs(Thermawmitem Single Pulse Avalanche Energy © 980 mJ
IAR Avalanche Current co See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy s mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case © - 0.45
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °CNV
ReJA Junction-to-Ambient, TO-22O © - 62
RNA Junction-to-Ambient (PCB Mount) , D2Pak ©© - 40
1
11/3/04
IRF/B/S/SL4310
International
TOR Rectifier
Static © T,, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.064 - V/°C Reference to 25°C, ID = ImA0)
RD3(on) Static Drain-to-Source On-Resistance - 5.6 7.0 m9 Vss = 10V, ID = 75A S
Vasim) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 250PA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, Vas = 0V
- - 250 Vos = 100v, Vss = ov, Tu = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
Rs Gate Input Resistance - 1.4 - Q f= 1MHz, open drain
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 160 - - S Vos = 50V, ID = 75A
Qg Total Gate Charge - 170 250 nC ID = 75A
Qgs Gate-to-Source Charge - 46 - Vos = 80V
di Gate-to-Drain ("Miller") Charge - 62 - Vas = 10V 6)
tdwn) Turn-On Delay Time - 26 - ns VDD = 65V
t, Rise Time - 110 - ID = 75A
td(ott) Turn-Off Delay Time - 68 - Fla = 2.69
t, Fall Time - 78 - N/ss = 10V s
Ciss Input Capacitance - 7670 - pF Vas = 0V
Coss Output Capacitance - 540 - Vos = 50V
Crss Reverse Transfer Capacitance - 280 - f = 1 .OMHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)@ - 650 - Vas = 0V, VDs = 0V to 80V co, See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 720.1 - Vas = 0V, Vos = 0V to 80V ©, See Fig. 5
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 1400) A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 550 integral reverse G
(Body Diode) coco p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 75A, Vss = 0V Cs)
trr Reverse Recovery Time - 45 68 ns T J = 25°C VR = 85V,
- 55 83 TJ = 125°C IF = 75A
Q,, Reverse Recovery Charge - 82 120 nC TJ = 25°C di/dt = 100A/ps ©
- 120 180 TJ=125°C
IRRM Reverse Recovery Current - 3.3 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
CO Calculated continuous current based on maximum allowable junction © Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmaX, starting Tu = 25°C, L = 0.35mH
Rs = 259, Me = 75A, Vas =10V. Part not recommended for use
above this value.
© ISD S 75A, di/dt S 550A/ps, VDD S V(BR)DSS: Tu S 175°C.
(9 Pulse width 5 400ps; duty cycle S 2%.
as Coss while Vros is rising from O to 80% V035.
Cr) Goss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while Vos is rising from 0 to 80% Voss-
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
© Ro is measured at T: approximately 90''C
