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IRFB42N20DPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
araRIectifier
SMPS MOSFET
llRFl342N20DPbF
HEXFET® Power MOSFET
PD- 95470
Applications V R
. max I
o High frequency DC-DC converters DSS DS(on) D
. Motor Control 200V 0.0559 44A
o Uninterrutible Power Supplies
o Lead-Free
Benefits
0 Low Gate-to-Drain Charge to Reduce ,.
Switching Losses h . (I
. Fully Characterized Capacitance Including "it,1ri"i'(c';cllr,,
Effective Coss to Simplify Design, (See 'i):i'
App. Note AN1001)
o Fully Characterized Avalanche Voltage
and Current TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 44
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 31 A
IDM Pulsed Drain Current (D 180
Po @TA = 25°C Power Dissipation 2.4 W
PD @Tc = 25°C Power Dissipation 330
Linear Derating Factor 2.2 W/°C
Ves Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 2.5 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rch Junction-to-Case - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
Notes O) through © are on page 8
1
7/7/04
llRFl342N20DPbF International
TOR Rectifier
Static © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - -- V Vss = 0V, ID = 250uA
AV(BF|)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.26 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.055 Q l/ss = 10V, ID = 26A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V VDS = I/ss, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 PA Vos = 200V, Vss = 0V
- - 250 Vos = 160V, l/tss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic tii) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 21 - - S VDS = 50V, ID = 26A
09 Total Gate Charge - 91 140 lo = 26A
095 Gate-to-Source Charge - 24 36 n0 VDs = 160V
di Gate-to-Drain ("Miller") Charge - 43 65 l/ss = 10V,
td(on) Turn-On Delay Time - 18 - VDD = 100V
t, Rise Time - 69 - ns ID = 26A
td(off) Turn-Off Delay Time - 29 - Rs = 1.89
tf Fall Time - 32 - Vas = 10V (4)
Ciss Input Capacitance - 3430 - Vss = 0V
Cogs Output Capacitance - 530 - Vros = 25V
Crss Reverse Transfer Capacitance - 100 - pF f = 1.0MHz
Cass Output Capacitance - 5310 - Ves = 0V, VDS = 1.0V, f = 1.0MHz
Coss Output Capacitance - 210 - l/ss = 0V, VDs = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 400 - 1/ss = 0V, VDS = 0V to 160V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 510 mJ
IAR Avalanche CurrentCD - 26 A
EAR Repetitive Avalanche EnergyC0 - 33 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ 44 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 180 integral reverse G
(Body Diode) O) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 26A, Vas = 0V (D
trr Reverse Recovery Time - 220 330 ns Tu = 25°C, IF = 26A
Qrr Reverse RecoveryCharge - 1860 2790 nC di/dt=100A/ps (4)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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