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IRFB42N20D
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD- 94208
IRFB42N20D
HEXFET® Power MOSFET
International
TOR Rectifier SMPS MOSFET
Applications
0 High frequency DC-DC converters
0 Motor Control
o Uninterrutible Power Supplies
RDS(on) max ID
0.0559 44A
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses
o Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
0 Fully Characterized Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 44
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 31 A
IDM Pulsed Drain Current OD 180
Po @TA = 25°C Power Dissipation 2.4 W
Pro @Tc = 25°C Power Dissipation 330
Linear Derating Factor 2.2 W/°C
Ves Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 2.5 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
ReJA Junction-to-Ambient - 62
Notes © through S are on page 8
1
5/7/01
IRFB42N20D International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.26 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.055 n VGs = 10V, ID = 26A ©
Vegan) Gate Threshold Voltage 3.0 - 5.5 V Vos = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vos = 200V, VGS = 0V
- - 250 Vos = 160V, N/ss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 21 - - S Vos = 50V, ID = 26A
% Total Gate Charge - 91 140 lo = 26A
Qgs Gate-to-Source Charge - 24 36 no VDs = 160V
di Gate-to-Drain ("Miller") Charge - 43 65 VGS = 10V,
tam") Turn-On Delay Time - 18 - VDD = 100V
tr Rise Time - 69 - ns ID = 26A
tum) Turn-Off Delay Time - 29 - Rs = 1.89
t, Fall Time - 32 - VGS = 10V ©
Ciss Input Capacitance - 3430 - Vss = 0V
Cass Output Capacitance - 530 - VDs = 25V
Crss Reverse Transfer Capacitance - 100 - pF f = 1.0MHz
Cass Output Capacitance - 5310 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 210 - VGS = 0V, Vos = 160V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 400 - VGs = 0V, VDs = 0V to 160V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 510 ml
IAR Avalanche CurrentC0 - 26 A
EAR Repetitive Avalanche Energyc0 - 33 m]
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 44 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 180 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 26A, VGS = 0V Cr)
trr Reverse Recovery Time - 220 330 ns TJ = 25°C, IF = 26A
Q,, Reverse RecoveryCharge - 1860 2790 nC di/dt = 100A/us ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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