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IRFB4229-IRFB4229PBF
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package
. PD - 97078A
International
Tart Rectifier llRFl34229PbF
Features
. Advanced Process Technology Key Parameters
. Key Parameters Optimized for PDP Sustain, VDS min 250 V
Energy Recovery and Pass Switch Applications V t 300 V
. Low EPULSE Rating to Reduce Power DS (Avalanche) yp.
Dissipation in PDP Sustain, Energy Recovery Rros(ON) typ. @ 10V 38 m9
and Pass Switch Applications IRP max @ Tc-- 100°C 91 A
. Low 09 for Fast Response Tu max 175 °C
. High Repetitive Peak Current Capability for
Reliable Operation D
. Short Fall & Rise Times for Fast Switching
.175°C Operating Junction Temperature for
Improved Ruggedness
. Repetitive Avalanche Capability for Robustness G ". 1 _,''' s
and Reliability " D
. Class-D Audio Amplifier 300W-500W S G
(Half-bridge) TO-220AB
Gate Drain Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter Max. Units
Vas Gate-to-Source Voltage t30 V
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 46 A
ID © Tc = 100°C Continuous Drain Current, Vss © 10V 33
G, Pulsed Drain Current OD 180
lm, @ To = 100°C Repetitive Peak Current G) 91
PD @Tc = 25°C Power Dissipation 330 w
PD @TC = 100°C Power Dissipation 190
Linear Derating Factor 2.2 W/°C
TJ Operating Junction and -40 to + 175 "C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10ltvin (1 .1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case © - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
RBJA Junction-to-Ambient © - 62
Notes C) through © are on page 8
1
09/10/07
lRFl34229PbF
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 250 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 210 - mV/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 38 46 m9 I/ss = 10V, ID = 26A ©
VGS(1h) Gate Threshold Voltage 3.0 - 5.0 V Vos = Vss, ID = 250pA
AVGs(m)/ATJ Gate Threshold Voltage Coefficient - -14 - mV/°C
loss Drain-to-Source Leakage Current - - 20 pA Vos = 250V, Vas = 0V
- - 1.0 mA l/ras = 250v, vGS = OV, Tu = 125°C
|GSS Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gts Forward Transconductance 83 - - S Vos = 25V, ID = 26A
q, Total Gate Charge - 72 110 nC Va, = 125V, ID = 26A, Vss = 10V©
di Gate-to-Drain Charge - 26 -
td(on) Turn-On Delay Time - 18 - VDD = 125V, Vas = 10V ©
t, Rise Time - 31 - ns '0 = 26A
td(ott) Turn-Off Delay Time - 30 - Ra = 2.49
t, Fall Time - 21 - See Fig. 22
ts! Shoot Through Blocking Time 100 - - ns VDD = 200V, VGS = 15V, Re-- 479
L = 220nH, C= 0.3pF, I/ss =15V
EPULSE Energy per Pulse - 790 - pd Vos = 200V, Re: 4.79, TJ = 25°C
- 1390 - L = 220nH, C= 0.3pF, Ves =15V
1/ros = 200V, Re: 4.79, T, = 100°C
Ciss Input Capacitance - 4560 - I/ss = 0V
Coss Output Capacitance - 390 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz,
Coss eff. Effective Output Capacitance - 290 - Vss = 0V, Vos = 0V to 200V
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) (i/ii:
LS Internal Source Inductance - 7.5 - from package GL /
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 130 mJ
EAR Repetitive Avalanche Energy (D - 33 mJ
VrsiAvaesnche) Repetitive Avalanche Voltage OD 300 - V
IAS Avalanche Current OD - 26 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ TC = 25°C Continuous Source Current - - 46 MOSFET symbol In
(Body Diode) A showing the L,-,
ISM Pulsed Source Current - - 180 Integral T"''' G E
(Body Diode) OD p-n junction diode. a
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 26A, Vas = 0V ©
trr Reverse Recovery Time - 190 290 ns Tu = 25oC, IF = 26A, VDD = 50V
l Reverse Recovery Charge - 840 1260 no di/dt = 100A/ps co
2
