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IRFB4227-IRFB4227PBF
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package
PD - 97035D
International
Tart Rectifier llRFl34227PbF
Features
. Advanced Process Technology Key Parameters
. Key Parameters Optimized for PDP Sustain, Vos max 200
Energy Recovery and Pass Switch Applications Vos (Avalanche)typ. 240
q Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery RDS(ON) typ. @ 10V o 19.7 mg
and Pass Switch Applications IRP max © TC: 100 C 130 A
. Low QG for Fast Response T J max 175 "C
. High Repetitive Peak Current Capability for
Reliable Operation D
. Short Fall & Rise Times for Fast Switching
.175°C Operating Junction Temperature for
Improved Ruggedness "l " . -,
q Repetitive Avalanche Capability for Robustness ". _ . S
and Reliability G
q Class-D Audio Amplifier 300W-500W S TO-220AB
(Half-bridge)
Gate Drain Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter Max. Units
Vss Gate-to-Source Voltage t30 V
|D © TC = 25°C Continuous Drain Current, Vss @ 10V 65 A
lr, © TC = 100°C Continuous Drain Current, Vss @ 10V 46
G, Pulsed Drain Current (D 260
lm, @ TC = 100°C Repetitive Peak Current s 130
PD @TC = 25°C Power Dissipation 330 W
PD @TC = 100°C Power Dissipation 190
Linear Derating Factor 2.2 W/°C
TJ Operating Junction and -40 to + 175 =
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10Ib-in (1.1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
Flax, Junction-to-Case Ci) - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
RGJA Junction-to-Ambient Ci) - 62
Notes C) through © are on page 8
1
09/10/07
lRFB4227PbF
International
Electrical Characteristics © T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 200 - - V Vas = OV, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 170 - mV/°C Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source On-Resistance - 19.7 24 m9 Vss = 10V, ID = 46A ©
Vegan) Gate Threshold Voltage 3.0 - 5.0 V l/os = I/ss, Ir, = 250pA
AVGSW/ATJ Gate Threshold Voltage Coefficient - -13 - mV/°C
|DSS Drain-to-Source Leakage Current - - 20 pA Vos = 200V, Vss = 0V
- - 1.0 mA Vos = 200V, Vss = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gis Forward Transconductance 49 - - S Vos = 25V, '0 = 46A
q, Total Gate Charge - 70 98 nC VDD = 100V, ID = 46A, Vss = love)
di Gate-to-Drain Charge - 23 -
tam) Turn-On Delay Time - 33 - ns Va, = 100V
t, Rise Time - 20 - ID = 46A
tdmm Turn-Off Delay Time - 21 - Ra = 2.59
t, Fall Time - 31 - Vss = 10V co
tst Shoot Through Blocking Time 100 - - ns Va, = 160V, Vss = 15V, Re: 4.79
L = 220nH, C= 0.4uF, Vss =15V
EPULSE Energy per Pulse - 570 - pJ VDS = 160V, Rs-- 4.79, To = 25°C
- 910 - L = 220nH, C-- 0.4pF, Vss =15V
vDs = 160V, Rs-- 4.7g, To = 100°C
Ciss Input Capacitance - 4600 - Vss = 0V
Coss Output Capacitance - 460 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 91 - f = 1.0MHz,
Coss eff. Effective Output Capacitance - 360 - Vss = 0V, Vos = 0V to 160V
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) {A
Ls Internal Source Inductance - 7.5 - from package G j
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 140 mJ
EAR Repetitive Avalanche Energy C) - 33 mJ
VDS(Ava.anche) Repetitive Avalanche Voltage C) 240 - V
IAS Avalanche Current C) - 39 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ TC = 25°C Continuous Source Current - - 65 MOSFET symbol a
(Body Diode) A showing the Lt
lo, Pulsed Source Current - - 260 integral reverse (5 (tLi,
(Body Diode) (D p-n junction diode. cl
Va, Diode Forward Voltage - - 1.3 V Tu = 25''C, ls = 46A, I/ss = 0V ©
trr Reverse Recovery Time - 100 150 ns Tu = 25°C, IF = 46A, Va, = 50V
a,, Reverse Recovery Charge - 430 640 nC di/dt = 1OOA/ps (3)
2
