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IRFB4212-IRFB4212PBF
100V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package
PD - 96918A
International
TOR Rectifier JN3liALAtAi2ltivlt2J3EL5Lr llRFl34212PbF
Features Key Parameters
q Key parameters optimized for Class-D audio Vos 100 V
amplifier applications RDS(ON) typ. @ 10V 72.5 m9
q Low RDSON for improved efficiency Q typ 15 nC
q Low Qs and QSW for better THD and improved Q typ 8 3 nC
SW . .
efficiency Ream) typ. 2.2 Q
. Low 0qu for better THD and lower EMI T, max 175 QC
q 175°C operating junction temperature for
ruggedness D
. Can deliver up to 150W per channel into 49 load in
half-bridge topology
TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance persilicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 100 V
Vss Gate-to-Source Voltage :20
ID © Tc = 25°C Continuous Drain Current, Vss © 10V 18 A
ID © To = 100°C Continuous Drain Current, Vss © 10V 13
IBM Pulsed Drain Current OD 57
PD @TC = 25°C Power Dissipation © 60 w
PD OTC; = 100°C Power Dissipation © 30
Linear Derating Factor 0.4 W/°C
TJ Operating Junction and -55 to + 175 I
Tsms Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10Ib-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RGJC Junction-to-Case G) - 2.5
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RNA Junction-to-Ambient co - 62
Notes C) through 6) are on page 2
1
9/16/05
IRFB4fiy12PbF International
Electrical Characteristics © T,, = 25°C (unless otherwise specified) zcmRecr/ier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.09 - V/°C Reference to 25°C, ID = 1mA
RDSM, Static Drain-to-Source On-Resistance - 58 72.5 mn Vss = 10V, ID = 13A (3)
VGS(lh) Gate Threshold Voltage 3.0 - 5.0 V VDS = Vss, ID = 250uA
AVGSNU/ATJ Gate Threshold Voltage Coefficient - -13 - mV/°C
loss Drain-to-Source Leakage Current - - 20 pA VDS = 100V, VGS = 0V
- - 250 Vos =100V,VGS = 0V, TJ = 125°C
lsss Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 l/ss = -20V
gts Forward Transconductance 11 - - S VDS = 50V, ID = 13A
a, Total Gate Charge - 15 23
0951 Pre-Vth Gate-to-Source Charge - 3.3 - Vos = 80V
0952 Post-Vth Gate-to-Source Charge - 1.4 - nC Vss = 10V
di Gate-to-Drain Charge - 6.9 - ID = 13A
ngd, Gate Charge Overdrive - 3.4 - See Fig. 6 and 19
as,, Switch Charge (0952 + di) - 8.3 -
Ream, Internal Gate Resistance - 2.2 - Q
tdon) Turn-On Delay Time - 7.7 - VDD = 50V, Vss = 10V (3)
t, Rise Time - 28 - ID = 13A
td(off) Turn-Off Delay Time - 14 - ns Rs = 2.532
t, Fall Time - 3.9 -
Ciss Input Capacitance - 550 - I/ss = 0V
Coss Output Capacitance - 66 - pF VDS = 50V
Crss Reverse Transfer Capacitance - 35 - f = 1.0MHz, See Fig.5
CUSS Effective Output Capacitance - 350 - Vas = OV, Vos = 0V to 80V
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) egg)
Ls Internal Source Inductance - 7.5 -r-r- from package J
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 25 mJ
IAR Avalanche Current (S) See Fig. 14, 15,17a, 17b A
EAR Repetitive Avalanche Energy s mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ To = 25°C Continuous Source Current - - 18 MOSFET symbol D
(Body Diode) A showing the Lr,
ISM Pulsed Source Current - - 57 integral reverse 5 (tl-'.
(Body Diode) C) p-n junction diode. R
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 13A, Vss = 0V (3
trr Reverse Recovery Time - 41 62 ns T., = 25°C, IF = 13A
Q,, Reverse Recovery Charge .-._ 69 100 no di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by max. junction temperature. 6) Ro is measured at To of approximately 90''C.
© Starting Tu = 25°C, L = 0.32mH, RG = 259, 'As = 13A. © Limited by ijax. See Figs. 14, 15, 17a, 17b for repetitive
© Pulse width S 400ps; duty cycle S 2%. avalanche information
2
