IRFS41N15D ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High frequency DC-DC convertersV R max IDSS DS(on) DBenefits150V ..
IRFS41N15DTRL ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package IRFB41N15DIRFIB41N15D IRFS41N15D IRFSL41N15D
IRFS4227 ,200V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak packageApplicationsT max 175 °CJ Low Q for Fast ResponseG High Repetitive Peak Current Capability forDDD ..
IRFS4227 ,200V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak packageApplicationsDS (Avalanche) Low E Rating to Reduce PowerPULSE R typ. @ 10V m
IRFB41N15D-IRFB41N15DPBF-IRFIB41N15D-IRFS41N15D -IRFS41N15DTRL
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
PD - 93804B
IRFB41 N 1 5D
TOR Rectifier IRFlB41N15D
IRFS41N15D
Applications IRFSL41N15D
0 High frequency DC-DC converters HEXFET© Power MOSFET
Voss RDS(on) max ID
Benefits
0 Low Gate-to-Drain Charge to Reduce 150V th045t2 41 A
Switching Losses
q Fully Characterized Capacitance Including W _ ..
Effective Coss to Simplify Design, (See 'itrft; 'C,N pf Mg,
App. Note AN1001) " "o"; t.
0 Fully Characterized Avalanche Voltage _
and Current TO-220AB TO-220 FullPak D2Pak TO-262
|RFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 41
lo @ To = 100°C Continuous Drain Current, I/ss @ 10V 29 A
IDM Pulsed Drain Current (D 164
PD @TA = 25°C Power Dissipation, D2Pak 3.1 W
PD @Tc = 25°C Power Dissipation, TO-220 200
PD @Tc = 25''C Power Dissipation, Fullpak 48
Linear Derating Factor, TO-220 1.3 W/°C
Linear Derating Factor, Fullpak 0.32
VGs Gate-to-Source Voltage f: 30 V
dv/dt Peak Diode Recovery dv/dt © 2.7 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 1.1(10) N. m (lbF in
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 0.75 °CNV
RoJc Junction-to-Case, Fullpak - 3.14
R005 Case-to-Sink, Flat, Greased Surface © 0.50 -
ROJA Junction-to-Ambient, TO-220 © - 62
ROJA Junction-to-Ambient, D2Pak C) - 40
ROJA Junction-to-Ambient, Fullpak - 65
Notes OD through co are on page 12
1
07/16/03
IRFB/IRFIB/IRFS/IRFSL41N15D
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.17 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.045 Q VGS = 10V, ID = 25A ©
VGS(lh) Gate Threshold Voltage 3.0 - 5.5 V VDS = l/GS, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Vos = 150V, Vss = 0V
- - 250 VDs = 120V, N/ss = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 30V
Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Dynamic © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 18 - - S Vos = 50V, ID = 25A
Qg Total Gate Charge - 72 110 ID = 25A
Qgs Gate-to-Source Charge - 21 31 no Vos = 120V
di Gate-to-Drain ("Miller") Charge - 35 52 l/ss = 10V (9
td(on) Turn-On Delay Time - 16 - VDD = 75V
t, Rise Time - 63 - ID = 25A
td(off) Turn-Off Delay Time - 25 - ns Re = 2-59
tr Fall Time - 14 - VGS = 10V (E)
Ciss Input Capacitance - 2520 - Vss = 0V
Cass Output Capacitance - 510 - VDs = 25V
Crss Reverse Transfer Capacitance - 110 - pF f = 1.0MHz
Coss Output Capacitance - 3090 - Ves = 0V, N/os = 1.0V, f = 1.0MHz
Cass Output Capacitance - 230 - Ves = ov, Vos = 120V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 250 - VGS = 0V, Vos = 0V to 120V Co
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 470 mJ
IAR Avalanche Current CD - 25 A
EAR Repetitive Avalanche Energy C) - 20 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 41 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 164 integral reverse G
(Body Diode) (D p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 25A, VGS = 0V ©
trr Reverse Recovery Time - 170 260 ns TJ = 25°C, ls = 25A
Qrr Reverse Recovery Charge - 1.3 1.9 PC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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