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IRFB4115-IRFB4115PBF
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
152R Rectifier
P9Fl'Mihl 5PbF
HEXFET© Power MOSFET
Applications D
q High Efficiency Synchronous Rectification in SMPS Voss 150V
0 1ni.rltrrupti.b.le Power Supply RDS(on) typ. 9.3mg2
o High Speed Power Switching
q Hard Switched and High Frequency Circuits max. 11mQ
s ID (Silicon Limited) 104A
Benefits
0 Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
0 Fully Characterized Capacitance and Avalanche
SOA ."
Enhanced body diode dV/dt and dI/dt Capability . os
Lead Free G
RoHS Compliant, Halogen-Free TO-220AB
Gate Drain Source
Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRFB4115PbF TO-220 Tube 50 IRFB4115PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 104
ID @ To = 100°C Continuous Drain Current, l/ss © 10V 74 A
G, Pulsed Drain Current C) 420
Po @Tc = 25°C Maximum Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
I/ss Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery (3) 18 V/ns
T, Operating Junction and -55 to + 175
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10Ib-in (1.1N-m)
Avalanche Characteristics
lEAso-hermawlimitem “Single Pulse Avalanche Energy C) 830 I m]
Thermal Resistance
Symbol Parameter Typ. Max. Units
FUs Junction-to-Case - 0.40
Rocs Case-to-Sink, Flat Greased Surface 0.50 - °C/W
RQJA Junction-to-Ambient ©© - 62
ll © 2014 International Rectifier
Submit Datasheet Feedback
November 11, 2014
I&"ZR BaAtM'il'illml4,
Static @ T, = 25''C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(anmss Drain-to-Source Breakdown Voltage 150 - - V Vas = 0V, ID = 250pA
AVvsooss/ATJ Breakdown Voltage Temp. Coefficient - 0.18 - V/°C Reference to 25°C, ID = 3.5mAC0
Rosmn) Static Drain-to-Source On-Resistance - 9.3 11 m9 l/ss = 10V, '0 = 62A ©
Vesnm Gate Threshold Voltage 3.0 - 5.0 V Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 HA Vos = 150V, Ves = 0V
- - 250 Vos =150V,VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -1OO Ves = -20V
Rs Internal Gate Resistance - 2.3 - Q
Dynamic © Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 97 - - S Vos = 50V, lo = 62A
09 Total Gate Charge - 77 120 nC ID = 62A
Qgs Gate-to-Source Charge - 28 - VDS = 75V
di Gate-to-Drain ("Miller") Charge - 26 - l/ss = 10V Ci)
stnc Total Gate Charge Sync. (Qg - di) - 51 - ID = 62A, Vos =0V, I/ss = 10V
td(on) Turn-On Delay Time - 18 - ns VDD = 98V
t, Rise Time - 73 - ID = 62A
td(off) Turn-Off Delay Time - 41 - Rs = 2.29
t, Fall Time - 39 - Vss = 10V ©
Ciss Input Capacitance - 5270 - pF Vss = 0V
Coss Output Capacitance - 490 - Vos = 50V
Crss Reverse Transfer Capacitance - 105 - f = 1.0 MHz, See Fig. 5
Cass eff. (ER) Effective Output Capacitance (Energy Related) - 460 - l/ss = 0V, Vos = 0V to 120V ©, See Fig. 11
Coss eff. (TR) Effective Output Capacitance (Time Related) - 530 - Vas = 0V, Vos = 0V to 120V s
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 104 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 420 A integral reverse G
(Body Diode) C) p-n junction diode. s
l/ao Diode Forward Voltage - - 1.3 V Tu = 25''C, ls = 62A, Vas = 0V ©
trr Reverse Recovery Time - 86 - ns T J = 25°C Vs, = 130V,
- 110 - TJ=125°C IF=62A
Qrr Reverse Recovery Charge - 300 - nC Tu = 25°C di/dt = 100A/ps ©
_ 45o - T J = 125°C
|RFWI Reverse Recovery Current - 6.5 - A Tu = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by max. junction s Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature, as COSS while Vos is rising from O to 80% Voss.
© Recommended max EAS limit, starting To = 25oC, © Crass eff. (ER) is a fixed capacitance that gives the same energy as
L = 0.17mH, Rs = 25Q, IAS; = IMA, Vss =15V. Coss while Vos is rising from O to 80% Voss.
© 'SD s: 62A, di/dts1040A/ps, VDD S V(BR)DSS' Tu S 17500 (D When mounted on 1" square PCB (FR-4 or G-1O Material). For recom
q) Pulse width f 400ps; duty cycle S 2%. mended footprint and soldering techniques refer to application note #AN-994.
Re is measured at Tu approximately 90°C.
iil © 2014 International Rectifier Submit Datasheet Feedback November11, 2014
