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IRFB4110-IRFB4110PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tt,t,"tiR Rectifier
|R
Applications
HEXFET® Power MOSFET
0 High Efficiency Synchronous Rectification in SMPS D Voss 100V
. Uninterruptible Power Supply Rns(on) typ. 3.7mQ
o High Speed Power Switching A max. 4.5mQ
0 Hard Switched and High Frequency Circuits G I ... . .
D (Silicon Limited) 180A co
s ID (Package Limited) 120A
Benefits
0 Improved Gate, Avalanche and Dynamic dv/dt D
Ruggedness .. " .,
0 Fully Characterized Capacitance and Avalanche 'it,1i"i.(sir'':
SOA - 'Cr 'a
0 Enhanced body diode dV/dt and dI/dt Capability " .I‘
. Lead Free GD
. RoHS Compliant, Halogen-Free TO-220AB
Gate Drain Source
Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRFB4110PbF TO-220 Tube 50 IRFB4110PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
'0 @ To = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 18000 A
lo @ To = 100°C Continuous Drain Current, Ves @ 10V (Silicon Limited) 130CO
ID @ TC = 25°C Continuous Drain Current, Vss © 10V (Wire Bond Limited) 120
G, Pulsed Drain Current C) 670
PD @Tc = 25°C Maximum Power Dissipation 370 W
Linear Derating Factor 2.5 W/°C
Vss Gate-to-Source Voltage t 20 V
dv/dt Peak Diode Recovery Ci) 5.3 V/ns
T, Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10llrin (1.1N-m)
Avalanche Characteristics
EAs (Thermallylimited) Single Pulse Avalanche Energy (3 190 mJ
IAR Avalanche Current © See Fig. 14, 15, 22a, 22b A
EAR Repetitive Avalanche Energy (3 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJc Junction-to-Case © - 0.402
Rocs Case-to-Sink, Flat Greased Surface 0.50 - °C/W
RBJA Junction-to-Ambient - 62
fl © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
Ii%i33(4tiMt)T'ill©
Static (ii) Tu = 25°C (unless otherwise specified)
Symbol Parameter Min Typ. Max. Units Conditions
V(Bmss Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.108 - VPC Reference to 25°C, ID = 5mA©
Rosmn) Static Drain-to-Source On-Resistance 3.7 4.5 mn Vas = 10V, ID = 75A (9
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, l/as = 0V
- - 250 Vos = 100v, Vas = OV, T, = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 160 - - S Vos = 50V, ID = 75A
Qg Total Gate Charge - 150 210 nC ID = 75A
Qgs Gate-to-Source Charge - 35 - Vos = 50V
di Gate-to-Drain ("Miller") Charge - 43 - Vas = 10V s
Rs Gate Resistance - 1.3 - Q
tum, Turn-On Delay Time - 25 - ns VDD = 65V
t, Rise Time - 67 - ID = 75A
tion Turn-Off Delay Time - 78 - Rs = 2.60
t, Fall Time - 88 - I/ss = 10V (9
Ciss Input Capacitance - 9620 - pF Vss = 0V
Coss Output Capacitance - 670 - Vos = 50V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)@ - 820 - I/ss = 0V, Vos = 0V to 80V
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 950 - I/ss = 0V, Vos = 0V to 80V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 1700D A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 670 integral reverse G
(Body Diode) ©© p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 75A, Vss = 0V G)
trr Reverse Recovery Time - 50 75 ns T J = 25°C VR = 85V,
- 60 90 TJ = 125°C IF = 75A
Q,, Reverse Recovery Charge - 94 140 nC TJ = 25°C di/dt = 100A/ps s
- 140 210 TJ=125°C
IRRM Reverse Recovery Current - 3.5 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction GD Iso S 75A, di/dt S 63OA/ps, VDDS V(BR)DSS: Tu S 175°C.
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting Tu = 25°C, L = 0.033mH
RG = 259, IAS = 108A, Ves =1OV. Part not recommended for use
above this value.
S Pulse width S 400ps; duty cycle S 2%.
© Cass eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDs is rising from 0 to 80% Voss.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from Oto 80% Voss-
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
© R0 is measured at Tu approximately 90°C.
© 2014 International Rectifier
Submit Datasheet Feedback April 28, 2014
