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IRFB4020-IRFB4020PBF
200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package
PD - 97195
International
ISBR Rectifier DlGlTALAUl0lOMOSFET lRFl34020PbF
Features Key Parameters
q Key parameters optimized for Class-D audio Vos 200 V
amplifier applications RDS(ON) typ. @ 10V 80 mg
q Low RDSON for improved efficiency Cl, typ. 18 nC
q Low ck and QSW for better THD and improved st typ. 6.7 nC
efficiency Ream) typ. 3.2 Q
. Low QRR for better THD and lower EMI T, max 175 CC
q 175°C operating junction temperature for
ruggedness D
. Can deliver up to 300W per channel into 89 load in l .- 's
half-bridge configuration amplifier "it-it""-,'),.;:'''"';
' A "y Ts IKE.
G N, ". .,"
TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance persilicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for CIassD audio amplifier applications.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 200 V
Vas Gate-to-Source Voltage :20
ID © TC = 25°C Continuous Drain Current, Vss @ 10V 18 A
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 13
G, Pulsed Drain Current C) 52
PD @TC = 25°C Power Dissipation GD 100 w
PD @To = 100°C Power Dissipation GD 52
Linear Derating Factor 0.70 W/°C
TJ Operating Junction and -55 to + 175 °C
Tsms Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 1OIb-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
R0J0 Junction-to-Case © _ 1.43
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RBJA Junction-to-Ambient Ci) _ 62
Notes co through G) are on page 2
1
03/03/06
IRFB4020PbF International
TO.R Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 - - V l/ss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.23 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 80 100 m9 VGS = 10V, ID = 11A co
VGS(th) Gate Threshold Voltage 3.0 - 4.9 V Vos = Vas, b = 100pA
AVGSM/ATJ Gate Threshold Voltage Coefficient - -13 - mV/°C
loss Drain-to-Source Leakage Current - - 20 pA l/rss = 200V, l/tss = 0V
- - 250 Vos = 200V, I/ss = 0V, Tu = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gis Forward Transconductance 24 - - S Ihas = 50V, ID = 11A
(A, Total Gate Charge - 18 29
0931 Pre-Vth Gate-to-Source Charge - 4.5 - VDS = 100V
Qgs2 Post-l/th Gate-to-Source Charge - 1.4 - nC Vas = 10V
di Gate-to-Drain Charge - 5.3 - ID = 11A
ngd, Gate Charge Overdrive - 6.8 - See Fig. 6 and 18
st Switch Charge (0952 + di) - 6.7 -
Ream) Internal Gate Resistance - 3.2 - Q
tton) Turn-On Delay Time - 7.8 - VDD = 100V, Ves = 10V Cl)
t, Rise Time - 12 - ID = 11A
td(off) Turn-Off Delay Time - 16 - ns Rs = 2.49
t, Fall Time - 6.3 -
Ciss Input Capacitance - 1200 - Vas = 0V
Coss Output Capacitance - 91 - pF Vos = 50V
Crss Reverse Transfer Capacitance - 20 - f = 1.0MHz, See Fig.5
Coss eff. Effective Output Capacitance - 110 - Vas = 0V, VDS = 0V to 160V
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) f l
Ls Internal Source Inductance - 7.5 - from package GAL )
and center of die contact 71s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 94 mJ
IAR Avalanche Current s See Fig. 14, 15, 16a, 16b A
EAR Repetitive Avalanche Energy (3 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls © TC = 25°C Continuous Source Current - - 18 MOSFET symbol C)
(Body Diode) A showing the Q:
Iss, Pulsed Source Current - - 52 integral reverse G c,
(Body Diode) C) p-n junction diode. q
Va, Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 11A, Vas = 0V ©
trr Reverse Recovery Time - 82 120 ns Tu = 25°C, IF = 11A
Q,, Reverse Recovery Charge - 280 420 nC di/dt = 100A/ps (3
Notes:
C) Repetitive rating; pulse width limited by max. junction temperature. (9 Flo is measured at TJ of approximately 90°C.
© Starting T, = 25°C, L = 1.62mH, Ra = 259, 'As = 11A. s Limited by ijax. See Figs. 14, 15, 17a, 17b for repetitive
© Pulse width S 400ps; duty cycle S 2%. avalanche information.
2
