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IRFB4019 -IRFB4019PBF
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Features
. Key Parameters Optimized for CIass-D Audio
Amplifier Applications
q Low RDSON for Improved Efficiency
q Low Q3 and st for Better THD and Improved
Efficiency
q Low QRR for Better THD and Lower EMI
q 175°C Operating Junction Temperature for
Ruggedness
. Can Deliver up to 200W per Channel into 89 Load in
Half-Bridge Configuration Amplifier
Description
DIGITAL AUDIO MOSFET
PD - 97075
llRFl34019PbF
Key Parameters
VDS 150 V
Rosm) typ. @ 10V 80 m9
q, typ. 13 nC
st typ. 5.1 nC
Ream) typ. 2.4 Q
Tu max 175 °C
G /' S
S TO-220AB
Gate Drain Source
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance persilicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key CIass-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for CIassD audio amplifier applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 150 V
l/ss Gate-to-Source Voltage t20
b @ To = 25°C Continuous Drain Current, Vas @ 10V 17 A
lo @ To = 100°C Continuous Drain Current, I/ss @ 10V 12
IBM Pulsed Drain Current C) 51
Po @TC = 25°C Power Dissipation © 80 w
PD ©Tc = 100°C Power Dissipation © 40
Linear Derating Factor 0.5 W/°C
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Roc Junction-to-Case © - 1.88
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RNA Junction-to-Ambient © - 62
Notes C) through 6) are on page 2
1
3/2/06
IRFl340'19PbF International
122R Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 150 - - V Vss = 0V, ID = 250PA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.19 - V/°C Reference to 25°C, ID = 1mA
R050”) Static Drain-to-Source On-Resistance - 80 95 m9 VGs = 10V, lo = 10A Cl)
VSS(th) Gate Threshold Voltage 3.0 - 4.9 V Vos = VGS, ID = 50pA
AVGS(,h)/ATJ Gate Threshold Voltage Coefficient - -13 - mV/°C
loss Drain-to-Source Leakage Current - - 20 pA I/rss = 150V, VGs = 0V
- - 250 Vos = 150V, sz = OV, To = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gts Forward Transconductance 14 - - S VDS = 10V, ID = 10A
Q, Total Gate Charge - 13 20
0951 Pre-Vth Gate-to-Source Charge - 3.3 - Vos = 75V
0952 Post-Vth Gate-to-Source Charge - 0.95 - nC Vss = 10V
di Gate-to-Drain Charge - 4.1 - ID = 10A
ngd, Gate Charge Overdrive - 4.7 - See Fig. 6 and 19
st Switch Charge (Qgsz + di) - 5.1 -
RGW) Internal Gate Resistance - 2.4 - Q
tum) Turn-On Delay Time - 7.0 - VDD = 75V, VGs = 10V O)
t, Rise Time - 13 - Io =10A
tam) Turn-Off Delay Time - 12 - ns Rs = 2.49
t, Fall Time - 7.8 -
Ciss Input Capacitance - 800 - Vss = 0V
Coss Output Capacitance - 74 - pF Vos = 50V
Crss Reverse Transfer Capacitance - 19 - f = 1.0MHz, See Fig.5
Coss Effective Output Capacitance - 99 - Vss = 0V, VDS = 0V to 120V
Lo Internal Drain Inductance - 4.5 - Between lead, J
nH 6mm (0.25in.) Sgt:
LS Internal Source Inductance - 7.5 - from package J
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 73 mJ
IAR Avalanche Current s See Fig.14,15, 17a,17b A
EAR Repetitive Avalanche Energy s mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ To = 25°C Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the C,--,
ISM Pulsed Source Current - - 51 integral reverse G E
(Body Diode) co p-n junction diode. 'l
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 10A, Vss = 0V Cl)
1,, Reverse Recovery Time - 64 96 ns Tu = 25°C, IF = 10A
Qrr Reverse Recovery Charge - 160 240 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by max. junction temperature. 6) Ro is measured at To of approximately 90''C.
© Starting Tu = 25°C, L = 1.46mH, RG = 259, 'As = 10A. © Limited by ijax. See Figs. 14, 15, 17a, 17b for repetitive
© Pulse width S 400ps; duty cycle S 2%. avalanche information
2
