IRFB38N20DPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsKey Parameters High frequency DC-DC convertersV200 V Plasma Display Panel DSV min.260 ..
IRFB4019 ,150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRFB4019PBF ,150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Drain-to-Source Voltage 150 VDSV Gate-to ..
IRFB4020 ,200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRFB4020PBF ,200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Drain-to-Source Voltage 200 VDSVGate-to- ..
IRFB4110 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV100VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.Uninterruptible P ..
ISL6292DCRZ ,Li-ion/Li polymer battery charger.ApplicationsISL6292DCRZ-T 16 Ld 4x4 QFN Tape and Reel (Pb-free)(Note)• Handheld Devices including M ..
ISL6292DCRZ-T ,Li-ion/Li polymer battery charger.Electrical Specifications Typical values are tested at VIN = 5V and 25°C Ambient Temperature, maxim ..
ISL6293-2CR , Li-ion/Li Polymer Battery Charger Accepting Two Power Sources
ISL6293-2CR-T , Li-ion/Li Polymer Battery Charger Accepting Two Power Sources
ISL6293-2CR-T , Li-ion/Li Polymer Battery Charger Accepting Two Power Sources
ISL6293-2CR-T , Li-ion/Li Polymer Battery Charger Accepting Two Power Sources
IRFB38N20DPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 97001 C
. . IRFB38N20DPbF
TOR. Rectifier IRFS38N20DPbF
lFlFSL38N20DPbF
Applications HEXFET Power MOSFET
q High frequency DC-DC converters Key Parameters
0 Plasma Display Panel VDS 200 V
I/os (Avalanche) min. 260 V
Benefits RDS(0N) max @ 10V 54 mf2
0 Low Gate-to-Drain Charge to TJ max 175 °C
Reduce Switching Losses
q Fully Characterized Capacitance ,. V
Including Effective Coss to Simplify t, f, ' " 4i,iitx
Design, (See App. Note AN1001) N5ii(ii' 's., "i1ifiiii; V
o Fully Characterized Avalanche Voltage N, os" t, ,
and Current
0 Lead-Free TO-22OAB D2Pak TO-262
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, l/ss @ 10V (D 43*
ID @ Tc = 100°C Continuous Drain Current, Vas @ 10V © 30* A
IDM Pulsed Drain Current (D 180
PD @TA = 25°C Power Dissipation C) 3.8 W
Po @Tc = 25°C Power Dissipation © 300*
Linear Derating Factor (D 2.0* W/°C
VGS Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 9.5 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© 10lbt.in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.47*
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - ''C/W
ReJA Junction-to-Ambient© - 62
ReJA Junction-to-Ambient® - 40
* RQJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes (D through (D are on page 11
1
09/22/10
IRFB/S/SL38N20DPbF
International
TOR Rectifier
Static © To = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V Vas = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.22 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.054 n Vss = 10V, ID = 26A ©
Vegan) Gate Threshold Voltage 3.0 - 5.0 V Vos = Veg, ID = 250pA
bss Drain-to-Source Leakage Current - 25 pA VDS = 200V, Vss = 0V
- - 250 vDs = 160V, Vss = ov, To = 150°C
la Gate-to-Source Forward Leakage - - 100 n A Vas = 30V
ss Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 17 - - S Vos = 50V, ID = 26A
% Total Gate Charge - 60 91 ID = 26A
Qgs Gate-to-Source Charge - 17 25 nC VDS = 100V
di Gate-to-Drain ("Miller") Charge - 28 42 Vas = 10V, 6)
tdmn) Turn-On Delay Time - 16 - VDD = 100V
t, Rise Time - 95 - ns ID = 26A
tu(ott) Turn-Off Delay Time - 29 - Re = 2.59
if Fall Time - 47 - Vas = 10V C4)
Ciss Input Capacitance - 2900 - l/ss = 0V
COSS Output Capacitance - 450 - Vos = 25V
Crss Reverse Transfer Capacitance - 73 - pF f = 1.0MHz
Coss Output Capacitance - 3550 - Vss = 0V, l/os = 1.0V, f = 1.0MHz
Coss Output Capacitance -- 180 - Viss = 0V, Ihos = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 380 - Vas = 0V, VDs = 0V to 160V (9
Avalanche Characteristics
Parameter Min Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - - 460 mJ
IAR Avalanche Current CO -- - 26 A
EAR Repetitive Avalanche Energy CO - 390 - mJ
VDS (Avalanche) Repetitive Avalanche Voltage C) 260 - - V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ 44 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 180 integral reverse G
(Body Diode) CN)) p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V TJ = 25°C, ls = 26A, Vas = 0V ©
trr Reverse Recovery Time - 160 240 nS TJ = 25°C, Ir = 26A
Qrr Reverse RecoveryCharge - 1.3 2.0 pC di/dt = 100A/ps (4)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
