IRFB38N20D ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 94358AIRFB38N20D IRFS38N20DSMPS MOSFET IRFSL38N20D®HEXFET Power MOSFET
IRFB38N20D. ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.054Ω 44ABenefits Low Gate ..
IRFB38N20DPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsKey Parameters High frequency DC-DC convertersV200 V Plasma Display Panel DSV min.260 ..
IRFB4019 ,150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRFB4019PBF ,150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Drain-to-Source Voltage 150 VDSV Gate-to ..
IRFB4020 ,200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
ISL6292DCRZ ,Li-ion/Li polymer battery charger.ApplicationsISL6292DCRZ-T 16 Ld 4x4 QFN Tape and Reel (Pb-free)(Note)• Handheld Devices including M ..
ISL6292DCRZ-T ,Li-ion/Li polymer battery charger.Electrical Specifications Typical values are tested at VIN = 5V and 25°C Ambient Temperature, maxim ..
ISL6293-2CR , Li-ion/Li Polymer Battery Charger Accepting Two Power Sources
ISL6293-2CR-T , Li-ion/Li Polymer Battery Charger Accepting Two Power Sources
ISL6293-2CR-T , Li-ion/Li Polymer Battery Charger Accepting Two Power Sources
ISL6293-2CR-T , Li-ion/Li Polymer Battery Charger Accepting Two Power Sources
IRFB38N20D-IRFB38N20D.-IRFS38N20D
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 94358A
Internohqrjol IRFB38N20D
TOR Rectifier SMPS MOSFET IRFS38N20D
IRFSL38N20D
HEXFET® Power MOSFET
Applications
V R max I
0 High frequency DC-DC converters DSS DS(on) D
200V 0.0549 44A
Benefits
0 Low Gate-to-Drain Charge to Reduce
Switching Losses
o Fully Characterized Capacitance Including " 'iiiiiir
Effective Coss to Simplify Design, (See 'R5irfl,
App. Note AN1001) 'ti)),,
o Fully Characterized Avalanche Voltage
and Current TO-220AB D2Pak TO-262
IRFB38N20D IRFS38N20D IRFSL38N20D
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 44
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 32 A
IDM Pulsed Drain Current C) 180
PD @TA = 25°C Power Dissipation © 3.8 W
PD @Tc = 25°C Power Dissipation 320
Linear Derating Factor 2.1 W/°C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 9.5 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rsoc Junction-to-Case - 0.47
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
RQJA Junction-to-Ambient© - 62
ReJA Junction-to-Ambient® - 4O
Notes (D through (D are on page 11
www. irf.com 1
06/25/02
IRFB/IRFS/IRFSL38N20D
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.22 - VI°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.054 Q VGS = 10V, ID = 26A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = Vss, ID = 250PA
bss Drain-to-Source Leakage Current - - 25 pA Vros = 200V, VGS = 0V
- - 250 Vros = 160V, I/ss = 0V, To = 150°C
ks Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
ss Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 17 - - S Vos = 50V, ID = 26A
Qg Total Gate Charge - 60 91 ID = 26A
Qgs Gate-to-Source Charge - 17 25 n0 Vos = 100V
di Gate-to-Drain ("Miller") Charge - 28 42 VGS = 10V, ©
tum") Turn-On Delay Time - 16 - N/oo = 100V
tr Rise Time - 95 - ns ID = 26A
Lott) Turn-Off Delay Time - 29 - Rs = 2.59
tt Fall Time - 47 - VGs = 10V ©
Ciss Input Capacitance - 2900 - VGs = 0V
Coss Output Capacitance - 450 - Vos = 25V
Crss Reverse Transfer Capacitance - 73 - pF f = 1.0MHz
Coss Output Capacitance - 3550 - N/ss = 0V, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 180 - VGS = 0V, Vros = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 380 - VGs = 0V, Vos = 0V to 160V 6)
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 460 mJ
IAR Avalanche Current0) - 26 A
EAR Repetitive Avalanche Energy0) - 32 ml
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 44 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 180 integral reverse G
(Body Diode) (OO) p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V TJ = 25''C, ls = 26A, VGS = 0V ©
tn Reverse Recovery Time - 160 240 nS TJ = 25°C, IF = 26A
Gr Reverse RecoveryCharge - 1.3 2.0 PC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
2
